HMBT6517
Abstract: HMBT6520
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6806 Issued Date : 1996.04.10 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE6806
HMBT6520
HMBT6520
OT-23
HMBT6517
183oC
217oC
260oC
HMBT6517
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PDF
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HMBT6517
Abstract: HMBT6520
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6806 Issued Date : 1996.04.10 Revised Date : 2002.11.29 Page No. : 1/3 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE6806
HMBT6520
HMBT6520
OT-23
HMBT6517
HMBT6517
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PDF
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HMBT6520
Abstract: HMBT6517
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages.
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Original
|
HE6836
HMBT6517
HMBT6517
OT-23
HMBT6520
183oC
217oC
260oC
HMBT6520
|
PDF
|
HMBT6517
Abstract: HMBT6520
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6836 Issued Date : 1994.07.20 Revised Date : 2002.10.25 Page No. : 1/3 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE6836
HMBT6517
HMBT6517
OT-23
HMBT6520
HMBT6520
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PDF
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