HM65162B Search Results

Contextual Info: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 2048 x 8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65162 AND HM65162B ESA/SCC Detail Specification No. 9301/015

hm65162c-5

Contextual Info: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C

M65162

Abstract: t29 55v
Contextual Info: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)

Contextual Info: 4bE D HARRIS SEMICON» SECTOR ÌH H U S E M I C O N D U C T O R U A R R IS • 43Q2271 0D3T1SG T W H A S H M - 6 5 1 6 2 'T -4 U j-Z .'5 - | 2 . . 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • Fast Access T im e. . 7<V90nsMax

Contextual Info: 3 } H M - 6 5 1 2 / 8 8 3 2K x 8 Asynchronous CMOS Static RAM August 1996 Features • 6 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. T h e H M -6 5 1 6 2 /8 8 3 is a C M O S 2 0 4 8 x 8 Static Random

Contextual Info: H A R R M3DS271 GÜBTIS? 2 4bE ì> HARRIS SEMICOND SECTOR I S H M - 6 5 1 6 2 / 8 8 3 SEMICONDUCTOR 2K x 8 Asynchronous CMOS Static RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

8403602JA

Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
Contextual Info: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max

ma 6116 f5

Abstract: HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b
Contextual Info: HM-65162/883 TM 2kx8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V

MK48Z02

Abstract: M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP 24PIN CY7C128-45
Contextual Info: - 16 K X ¿&&ÍEH m % i t £t OC TAAC TCAC aax ns) (us) nMOS 'f S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) « TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN A M IDD aax (ibA)

Contextual Info: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.

hm 6164

Abstract: 65162 hm165162 harris HM1-65162 equivalent
Contextual Info: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: HARRIS SEMICOND SECTOR TS D É 4302271 0010714 b | T-4 6 -2 3 -12 HARRIS H M - 6 5 1 6 2 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts D IP • Fast Access Tim e. 55/70/90ns Max. T O P VIEW

8403602JA

Abstract: 8403606JA
Contextual Info: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max

ma 6116 f5

Abstract: ma 6116 f6 HM1-65162/883
Contextual Info: HM-65162/883 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

65162C

Abstract: 8403602JA 8403606JA
Contextual Info: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V

HM6116LP-3

Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2
Contextual Info: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2

F24.6 Package

Abstract: HM1-65162 HM1-65162C/883 6116 static ram 65162
Contextual Info: HM-65162/883 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V

Contextual Info: HM-65162/883 & W A « 2K x 8 Asynchronous CMOS St3tÌC RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: HM-65162/883 S 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random