HM624100H Search Results

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Contextual Info: HM624100HC Series Package Dimensions HM624100HCJP/HCLJP Series CP-32DB Rev. 1, Nov. 2001, page 13 of 14

Hitachi DSAUTAZ005

Contextual Info: HM624100H Series Package Dimensions HM624100HJP/HLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13

Contextual Info: HM624100H Series Ordering Information Type No. Access time Package HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 10 ns 12 ns 15 ns 400-mil 32-pin plastic SOJ CP-32DB HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 10 ns 12 ns 15 ns Pin Arrangement HM624100HJP/HLJP Series

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA0019 Hitachi DSA00197
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM624100H is an asynchronous high speed static RAM organized as 1-Mword X 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Hitachi DSAUTAZ006

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Hitachi DSAUTAZ006

Contextual Info: HM624100HC Series Package Dimensions HM624100HCJP/HCLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25 0.10 *Dimension including the plating thickness

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Hitachi DSA00281

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA0044
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM624100H

Contextual Info: HM624100H Series Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Block Diagram LSB A1 A17 A7 A11 A16 A2 A6 A5 (MSB) Internal

HM624100HC

Contextual Info: HM624100HC Series Block Diagram Rev. 1, Nov. 2001, page 4 of 14

Contextual Info: HM624100HC Series Pin Arrangement Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Rev. 1, Nov. 2001, page 3 of 14

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00358
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA00316
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Contextual Info: HM624100HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS I/O1 VCC VSS I/O2 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Top view

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00190
Contextual Info: HM624100HC シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-565 (Z) 暫定仕様 ’ Rev. 0.0 00. 11. 30 概要 HM6 24 10 0H C シリーズは 1 M ワード×4 ビット構成の 4 M ビット高速スタティック RA M です。CMO S（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが

diode a3

Abstract: HM624100HC
Contextual Info: HM624100HC Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 (MSB) Internal voltage generater Row decoder 1024-row x 64-column × 16-block × 4-bit (4,194,304 bits) VSS CS Column I/O I/O1 . . . I/O4 Input data control A8 A9 A19 A17 A18 A15 A0 A2 A4 A16

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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