HM624100 Search Results

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Contextual Info: HM624100HC Series Package Dimensions HM624100HCJP/HCLJP Series CP-32DB Rev. 1, Nov. 2001, page 13 of 14

Hitachi DSAUTAZ005

Contextual Info: HM624100H Series Package Dimensions HM624100HJP/HLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13

Contextual Info: HM624100H Series Ordering Information Type No. Access time Package HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 10 ns 12 ns 15 ns 400-mil 32-pin plastic SOJ CP-32DB HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 10 ns 12 ns 15 ns Pin Arrangement HM624100HJP/HLJP Series

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA0019 Hitachi DSA00197
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM624100H is an asynchronous high speed static RAM organized as 1-Mword X 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Contextual Info: HM624100 Series- Preliminary 1,048,576-Word x 4-Bit High Speed CM O S Static Ram • FEATURES • High Speed: Fast access time 25/30/35/45 ns max. (P-version) 30/35/45 ns (max.) (LP-version) • Completely static memory No clock or timing strobe required

IB2D

Contextual Info: HITACHI/ LOGIC/ARRAYS/HEM S1E » • HM624100 Series- 4 4 ^ 0 3 DOlfllOG bTT ■ HITE - Preliminary 1,048,576-Word x 4-Bit High Speed CMOS Static Ram 2 3 - ¡ 0 ■ FEATURES • High Speed: Fast access time 25/30/35/45 ns max. (P-version)

Hitachi DSAUTAZ006

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Hitachi DSAUTAZ006

Contextual Info: HM624100HC Series Package Dimensions HM624100HCJP/HCLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25 0.10 *Dimension including the plating thickness

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Hitachi DSA00281

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA0044
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM624100HC

Contextual Info: HM624100HC Series Block Diagram Rev. 1, Nov. 2001, page 4 of 14

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 a2555 Hitachi DSA00189
Contextual Info: HM624100H シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-265B (Z) ’98. 9. 15 Rev. 1.0 概要 HM6 24 10 0H シリーズは 1M ワード×4 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し

Contextual Info: HM624100HC Series Pin Arrangement Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Rev. 1, Nov. 2001, page 3 of 14

3030L

Abstract: 10 35L C5
Contextual Info: bl E D MM^bEOa GG2112fi 245 « H I T S T - 4 6 - 23- HM624100 Series \ P — - Preliminary 1048576-word x 4-bit High Speed CMOS Static RAM HITACHI/ The Hitachi HM624100 is a high speed CMOS static RAM organized 1-Mword x 4bit. It realizes

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00358
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA00316
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

Contextual Info: HM624100HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS I/O1 VCC VSS I/O2 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Top view

Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00190
Contextual Info: HM624100HC シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-565 (Z) 暫定仕様 ’ Rev. 0.0 00. 11. 30 概要 HM6 24 10 0H C シリーズは 1 M ワード×4 ビット構成の 4 M ビット高速スタティック RA M です。CMO S（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが

diode a3

Abstract: HM624100HC
Contextual Info: HM624100HC Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 (MSB) Internal voltage generater Row decoder 1024-row x 64-column × 16-block × 4-bit (4,194,304 bits) VSS CS Column I/O I/O1 . . . I/O4 Input data control A8 A9 A19 A17 A18 A15 A0 A2 A4 A16