HM6208 Search Results

Contextual Info: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word X 4-Bit High Speed CM O S Static RAM The Hitachi HM 6208 and HM 6208H are high speed 256k static R A M S organized as 64k-word x 4 bit. They realize high speed a cc e ss time 25/35/45 ns and low power consum ption, em ploying

HM6208HP-45

Abstract: HM6208H HM6208HJP-25 HM6208HJP-35 HM6208HJP-45 HM6208HLJP-25 HM6208HLP-25 HM6208HLP-35 HM6208HLP-45 HM6208HP-25
Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM ADE-203Rev. 0.0 Dec. 1, 1995 Features • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power  Operation: 300 mW (typ)  Standby: 100 µW (typ)

Contextual Info: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word x 4-Blt High Speed CMOS Static RAM The Hitachi HM6208 and HM6208H are high speed 256k static RAMS organized as 64k-word x 4 bit. They realize high speed access time 25/35/45 ns and low power consumption, employing

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 (J.W (typ) 30 (J.W (typ) (L-version)

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ) 30 |iW (typ) (L-version)

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ) 30 |iW (typ) (L-version)

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM Features Pin Arrangement Single 5 V supply and high density 24-pin package High speed: Access time 25/35/45 ns max Low power — Operation: 300 mW (typ) — Standby: 100 (iW (typ) 30 |XW (typ) (L-version)

HM6208P-35

Contextual Info: HM6208 Series 65536-word x 4-bit High Speed CMOS Static RAM The Hitachi H M 6 2 0 8 is a high speed 2 5 6 k static R A M orga­ nized as 64-k word x 4-bit. It realizes high speed a cce ss time 35/45 ns and low power consumption, employing the advanced C M O S process technology.

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300m W (typ) — Standby: 100 |aW (typ) 30 juW (typ) (L-version)

HM6208HP-45

Abstract: HM6208H HM6208HJP-25 HM6208HJP-35 HM6208HJP-45 HM6208HLP-25 HM6208HLP-35 HM6208HLP-45 HM6208HP-25 HM6208HP-35
Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM Features Pin Arrangement • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 µW (typ)

Contextual Info: HM6208 H Series 65536-Word x 4-Bit High Speed CMOS Static RAM Th e H itachi H M 6 2 0 8 H is a high sp e e d 2 56 k static R A M org anize d a s 64k-word x 4 bit. It re a lize s high sp e e d a c c e s s tim e 25/35 and low pow er consum ption, em ploying C M O S p ro ce ss tech nolog y and

Contextual Info: HM6208H Series 65536-Word x 4-Bit High Speed CMOS Static RAM T h e Hitachi H M 6 2 0 8 H is a high sp e e d 2 5 6 k static R A M org an ized as 64k -w o rd x 4 bit. It realizes high sp e ed acc e s s tim e 2 5 /3 5 and low pow er consum ption , em ploying C M O S process techno log y and

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM HITACHI Features Pin Arrangement • Single 5 V supply and high density 24-pin package • High speed: Access time 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 pW (typ)

HM6208P-45

Abstract: HM6208LP-45 HM6208P-35 HM6208 HM6208H HM6208HP-25 HM6208HP-35 HM6208LP-35 HM6208P35 Hitachi Scans-001
Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM 4 4 clt EQ3 0 0 1 b 4 b l 1 • 2 TE D HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word x 4-Bit High Speed C M O S Static R A M The Hitachi HM62Q8 and HM6208H are high speed 256k static RA M S organized as 64k-word x 4 bit, They realize high speed

Hitachi CS 45 EM

Contextual Info: HM6208H Series 65,536-word x 4-bit High Speed CMOS Static RAM • Single 5 V supply and high density 24-pin package • High speed: A ccess tim e 25/35/45 ns m ax • L ow pow er — O peration: 300 m W (typ) — Standby: 100 (iW (typ) 30 |XW (typ) (L -version)

K7025

Abstract: B4641 24PIN CY7B194-15 CY7C194 EDI8464lp Hitachi Scans-001
Contextual Info: I 12 2 5 6 K X CMOS •i + > S t a t i c ?" « m ¿SfëiËII] M £ ft TAAC £ rc ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOIi max (ns) TWP min (ns) RAM ( 6 5 5 3 6 x 4 ) a TDS min (ns) TDH min (ns) TWD V D D or V C C (ns) TWR max '.ns) (V) 2 4 P I N

65536-word

Abstract: 8192-WORD SRAM
Contextual Info: Contents • L in e U p o f H ita c h i IC M e m o r i e s . 7 • P a c k a g e In f o rm a tio n s .

HM51W16405

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

hitachi hn27c256

Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Contextual Info: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

TMS320C40

Abstract: P3A7 TMX320C40GFL TM320C UY13-UY20 2532 eprom texas LCSR HM6208 transistor P3d SPRU035
Contextual Info: TMS320C4x Parallel Processing Development System Technical Reference 1993 Digital Signal Processing Products Printed in U.S.A., August 1993 2576298-9761 revision C SPRU075A Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines Book Type Title