HM2142 Search Results

Contextual Info: HM2142 4 0 9 6 -words x 1-b it Very High Speed Random Access Memory The H M 2142 is 4096-words x 1-bit very high speed read/write, random access memory developed for high speed systems such as pads and control/buffer storages. The fabrication process uses the Hitachi’s low capacitance, oxide

Contextual Info: HM2142 4 0 9 6 -w o r d s x 1 -b it Very High Speed Random A c c e s s Memory The H M 2142 is 4096-words x 1-bit very high speed read/w rite, random access m em ory developed fo r high speed systems such as pads and c o n tro l/b u ffe r storages. The fa b rica tio n process uses the H itachi's lo w capacitance, oxide

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

HD10131

Abstract: HD10125 HD10231 HD10116 HD100112 HD10K HD10130 HM10474
Contextual Info: CONTENTS • G E N E R A L I N F O R M A T I O N . 4 • Definition of Letter Symbols and Abbreviations.

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated