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    Abstract: No abstract text available
    Text: BVDSS = 500 V RDS on typ = 1.2 Ω HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW5N50S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI5N50S 1.Gate 2. Drain 3. Source


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