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Contextual Info: A SO LI T R O N D E V I C E S INC 4ÛE D • fi3bfit.02 GQ03SflS 14T . ^ o l ie r o n devices.we._ p i h ö P U G Y ï ^ ï i & ? 8 3 î ^ :W . g S « P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Drain-Gate Voltage |
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GQ03SflS di/dt-100A/JJ |