GHR16 Search Results

Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s Case Style R-1 • Component in accordance to RoHS 2002/95/EC

GHR16

Abstract: fr15
Contextual Info: FR15, GHR16 Voltage Range 1500-1600 Volts 0.3/0.5 Amp. Photoflash Rectifiers Forward Current 0.3/0.5 Ampere Features ‹ Fast switching ‹ Low leakage ‹ High forward surge current capability Mechanical Data ‹ Case: R-1 molded epoxy with UL94V-0 flammability

GHR16

Contextual Info: GHR16 New Product Vishay Semiconductors formerly General Semiconductor Photoflash Rectifier Reverse Voltage 1600V Forward Current 0.5A Case Style R-1 0.025 0.65 DIA. 0.021 (0.55) 0.787 (20.0) MIN. Features • Fast switching • Low leakage • High forward surge current capability

GHR16

Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier Major Ratings and Characteristics IF AV 500 mA VRRM 1600 V IFSM 20 A VF 1.5 V trr 300 ns Tj max. 175 °C Case Style R-1 Features Mechanical Data • • • • • Case: R-1 Epoxy meets UL-94V-0 Flammability rating

Contextual Info: GHR16 www.vishay.com Vishay General Semiconductor Photoflash Fast Plastic Rectifier FEATURES • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of

Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 R-1 • Compliant to RoHS directive 2002/95/EC and in

GHR16

Abstract: JESD22-B102 J-STD-002
Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s Case Style R-1 • Component in accordance to RoHS 2002/95/EC

GHR16-E3

Abstract: GHR16 JESD22-B102D J-STD-002B P600 06AUG07
Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds Case Style P600 • Component in accordance to RoHS 2002/95/EC

Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 R-1 • Compliant to RoHS directive 2002/95/EC and in

FR15

Abstract: GHR16
Contextual Info: C S v — ^Se m in c m FR15, GHR16 T^ 0.3/0.5 Amp. Photoflash Rectifiers 5Vh5EMi semiconductor _ Voltage Range 1500-1600 Volts Forward Current 0.3/0.5 Ampere Features_ ♦ ♦ ♦ F ast sw itch in g Lo w le a ka g e High fo rw a rd surge c u rre n t c a p a b ility

GHR16

Abstract: FR15
Contextual Info: FR15, GHR16 Photoflash Rectifiers Reverse Voltage 1500-1600 Volts Forward Current 0.3/0.5 Ampere Features Fast switching Low leakage High forward surge current capability Mechanical Data Case: R-1 molded epoxy with UL94V-0 flammability classification Polarity: Color band denotes cathode end

GHR16

Contextual Info: GHR16 t c u rod P New Case Style R-1 0.025 0.65 DIA. 0.021 (0.55) 0.787 (20.0) MIN. Photoflash Rectifier Reverse Voltage 1600V Forward Current 0.5A Features • Fast switching • Low leakage • High forward surge current capability Mechanical Data 0.126 (3.2)

Contextual Info: GHR16 www.vishay.com Vishay General Semiconductor Photoflash Rectifier FEATURES • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of

Contextual Info: GHR16 Vishay General Semiconductor Photoflash Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 R-1 • Compliant to RoHS directive 2002/95/EC and in

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

s104 diode 87a

Abstract: s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor
Contextual Info: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency

VISHAY MARKING CODE

Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Contextual Info: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band

vishay 1N4007 DO-214AC

Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
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MUR120 SMD

Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
Contextual Info: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

vishay 1N4007 DO-214AC

Abstract: VS30CTQ100-N3 MBRF2035CT vsb3200 40MT160K PB401 16CTU04 v80100 UGF5 10ETF10
Contextual Info: V i s h ay I n terte c h n o l o g y, I n c . 19 Rectifiers - Worldwide Leader in Power Rectifiers AND TEC O L OGY INNOVAT I N HN Rectifiers O 62-2012 Featured Products • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers

MVM010

Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG
Contextual Info: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J

vishay 1N4007 DO-214AC

Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
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