GG13T Search Results

SD210DE

Abstract: SD5400 sst211 sot-143
Contextual Info: SILICONIX INC 16E D • ÔS5473S GG13TÎ7 5 SD210DE SER IES C X 'S ilic o n ix Jm M in corporate d T -1 .S -Z 5 ' N-Channel Lateral D M O S FETs The SD 210D E Series of single-pole, single-throw analog switches is designed for high speed switching in audio, - video, and high-frequency

Contextual Info: uTECHNOLOGY rm O M TD Æ sL B IÜ M ii F in a l E le c tric a l S p e c ific a tio n s LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator January 1996 F€ATUR€S DCSCRIPTIOn • Floating Top Driver Switches Up to 60V ■ Internal Boost Regulator for DC Operation

Contextual Info: A N 7238K AN7238K Single Chip IC for FM-AM IF, AM Tuner, FM MPX Unit : mm • Description The AN7238K is a monolithic integrated circuit designed for FM-AM IF, AM T\iner and FM MPX Demodulation which are most suitable for DTS radio cassette recorder. The chip is encapsulated into 22-lead Shrunk DIL package.

cro circuit diagram

Abstract: Audio Amplifier diagram audio amplifier circuit diagram AN7348K DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK tape head preamp circuit 61kQ audio tape head preamp circuit PRE-AMPLIFIER FOR TAPE deck Panasonic SU
Contextual Info: AN7348K AN7348K Dual Record/Playback Pre-Amplifier IC for Double Cassette • Description T h e A N 7348K is a m onolithic integrated circu it d esigned fo r double cassette recorder. It has d ual ch annel PB / R ec am plifier w ith A L C function. Tape A PB o n ly and Tape

JR240V

Abstract: JR200V bo 135 JR240 JR220V JR170V
Contextual Info: 18E 5 SILICONIX INC • Î2SM735 0013110 0 JR135V SERIES f n r S ilic o n ix in c o r p o r a t e d High-Voltage Current Limiting Diodes _ ' V 11- - 2.7 o > CL — The JR135V Series of high-voltage diodes utilizes a MOS process to provide active current limiting over

MAX756CSA

Contextual Info: 19-0113;Rev. 2;1/95 3.3 V/5 V/Adjustable-Output, Step-Up DC-DC Converters The MAX756/MAX757 provide three improvements over previous devices. Physical size is reduced—the high switching frequencies up to 0.5MHz made possible by MOSFET power transistors allow for tiny (<5mm diameter)