GCQ30A03L Search Results

GCQ30A03L

Contextual Info: SBD T y p e : GCQ30A Q30A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol GCQ30A03L Unit Repetitive Peak Reverse Voltage

GCQ30A03L

Contextual Info: SBD T y p e : GCQ30A Q30A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol GCQ30A03L Unit Repetitive Peak Reverse Voltage

GCQ30A03L

Contextual Info: 30A Avg. 30 Volts SBD GCQ30A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : GCQ30A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

s431

Abstract: FCQ20A03L FCQ30A03L GCQ20A03L GCQ30A03L
Contextual Info: SCHOTTKY BARRIER DIODE GCQ30A03L FCQ30A03L soa/ sov FEATURES o TO-220AB : GCQ30A03L OTO-220AB Fully Molded Isolation : FCQ20A03L oD ual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability Approx. Net Weight : 1.9 Grams 1.75 Grams

Contextual Info: 30A Avg. 30 Volts SBD GCQ30A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : GCQ30A Q30A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol GCQ30A03L Unit VRRM

Contextual Info: SBD T y p e : GCQ30A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

Q30A03

Contextual Info: SBD T y p e : GCQ30A Q30A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol GCQ30A03L Unit Repetitive Peak Reverse Voltage

FCQ20A03L

Contextual Info: SCHOTTKY BARRIER DIODE GCQ30A03L FCQ30A03L 30A/30V 3.11.122 M AX _ 1 0 .3 < 0 5 )_ 3.4Î.134) n FEATURES OTO -220A B : GCQ30A03L OTO -220A B F ully M olded Iso la tio n : FCQ20A03L o D u a l D iodes - C athode C om m on O L ow F o rw a rd V o ltag e D rop

Contextual Info: SBD T y p e : GCQ30A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

Contextual Info: SCHOTTKY BARRIER DIODE GCQ30A03L FCQ30A03L soa / sov FEATURES o TO-220AB : GCQ30A03L OTO-220AB Fully Molded Isolation : FCQ20A03L o D ual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability Approx. Net Weight : 1.9 Grams 1.75 Grams

tc122 20 5 3

Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04