GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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I27243
GA100TS120UPbF
GA100TS120UPBF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120U
GA100TS120U
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width50s
Abstract: GA100TS120UPBF
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
width50s
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
GA100TS120UPBF
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PDF
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E78996 datasheet bridge
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
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PDF
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VS-GA100TS120UPBF
Abstract: No abstract text available
Text: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode
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VS-GA100TS120UPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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GA100TS120UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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VS-GA100TS120UPBF
Abstract: No abstract text available
Text: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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VS-GA100TS120UPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100TS120UPBF
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PDF
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VS-GA100TS120UPBF
Abstract: No abstract text available
Text: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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VS-GA100TS120UPbF
E78996
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT
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GA100TS120UPbF
18-Jul-08
GA100TS120UPBF
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PDF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT
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GA100TS120UPbF
18-Jul-08
GA100TS120UPBF
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PDF
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GA100TS120U
Abstract: No abstract text available
Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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50060B
GA100TS120U
T52-7105
GA100TS120U
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m5x0.8
Abstract: m5x0.8 DIMENSIONS GA100TS120U
Text: GA100TS120U Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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GA100TS120U
m5x0.8
m5x0.8 DIMENSIONS
GA100TS120U
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES • Generation 4 IGBT technology 3 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode 6 7
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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PDF
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HEXFET
Abstract: GA200TD120U GA500TD60U GA100TS60U
Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999
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OT-227
GA600GD25S
GA125TS120U
GA100TS120U
GA75TS120U
GA50TS120U
GA250TS60U
GA200TS60U
GA150TS60U
GA100TS60U
HEXFET
GA200TD120U
GA500TD60U
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IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
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O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
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IC 50061
Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998
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GA600GD25S
GA400TD25S
GA500TD60U
GA400TD60U
A75TS60U
GA250TD120U
GA200TD120U
GA150TD120U
GA125TS120U
IC 50061
FA57SA50LC
50071
GA400TD25S
FB180SA10
GA600GD25S
CHOPPER
GA200TD120U
GA200SA60U
GA200NS61U
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IRG4BC20UD
Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
Text: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed
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75-150kHz
O-220AB
IRG4BC20W
IRG4BC30W
IRG4BC40W
O-247AC
IRG4PC30W
IRG4PC40W
IRG4PC50W
IRG4BC20UD
CPV362M4F
irg4ph50ud
GA400TD25S
IRG4PC50
CPV362M4U
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD - 5.060A GA100TS120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE” IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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OCR Scan
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GA100TS120U
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PDF
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Untitled
Abstract: No abstract text available
Text: International I R Recti fi G f PD - 5.060A PR E LIM IN A R Y GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200
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GA100TS120U
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18672
Abstract: 100TS120U
Text: International IOSR Rectifier PD - 5.060A GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
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OCR Scan
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8-40kHz
200kHz
GA100TS120U
A100TS120U
18672
100TS120U
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