G1620
Abstract: No abstract text available
Text: G1620 Global Mixed-mode Technology Programmable 14+1 Channel Voltage Buffers with NVM for TFT LCD Features Supply Operation Range : 6.5V to 18V Applications 14+1 Channels : -14 Channel Rail-to-Rail Programmable Gamma Buffers 10 bits Resolution for each Channel
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G1620
100mA
140mA
TQFN5X5-32
OUT14
OUT10
G1620
TQFN5X5-32
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PA653TT
PA653TT
6205JJ1V0DS
G16205JJ1V0DS
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Untitled
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA652TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA652TT は，2.5 V 電源系による直接駆動が可能なスイッ チング素子です。
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PA652TT
PA652TT
G16204JJ1V0DS
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upa650
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 1.8 V drive available Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 68 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)
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PA650TT
PA650TT
upa650
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A)
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PA653TT
PA653TT
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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Original
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PA651TT
PA651TT
G16203JJ1V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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upa650
Abstract: marking WD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 1.8 V drive available Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
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PA650TT
PA650TT
upa650
marking WD
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA652TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)
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PA652TT
PA652TT
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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block diagram for intel core i5 processor
Abstract: LGA 1155 Socket PIN diagram intel CORE i3 instruction set
Text: Desktop 3rd Generation Intel Core Processor Family, Desktop Intel® Pentium® Processor Family, and Desktop Intel® Celeron® Processor Family Datasheet – Volume 1 of 2 June 2013 Document Number: 326764-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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upa650
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA650TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA650TT は，1.8 V 電源系による直接駆動が可能なスイッ チング素子です。
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Original
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PA650TT
PA650TT
G16202JJ1V0DS
upa650
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PDF
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Untitled
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA651TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA651TT は，1.8 V 電源系による直接駆動が可能なスイッ チング素子です。
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PA651TT
PA651TT
G16203JJ1V0DS
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D1207
Abstract: 25A45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA651TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
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PA651TT
PA651TT
D1207
25A45
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PDF
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LGA 1155 Socket PIN diagram
Abstract: intel LGA 1155 PIN diagram LGA 1150 Socket PIN diagram socket lga 1155 pinout 1155 lga socket pins lga1155 land
Text: Desktop 3rd Generation Intel Core Processor Family, Desktop Intel® Pentium® Processor Family, and Desktop Intel® Celeron® Processor Family Datasheet – Volume 1 of 2 January 2013 Document Number: 326764-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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PDF
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Untitled
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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Original
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PA650TT
PA650TT
G16202JJ1V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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Original
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PA652TT
PA652TT
G16204JJ1V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A)
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PA653TT
PA653TT
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PDF
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UPA65
Abstract: ed101
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA653TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA653TT は，4.0 V 電源系による直接駆動が可能なスイッ チング素子です。
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Original
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PA653TT
PA653TT
6205JJ1V0DS
G16205JJ1V0DS
UPA65
ed101
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PDF
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