FSU05A60
Abstract: No abstract text available
Text: 5A Avg. 600 Volts FRED FSU05A60 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー
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FSU05A60
FSU05A60
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FSU05A60
Abstract: No abstract text available
Text: FRD Type : FSU05A60 OUTLINE DRAWING For Power Factor Improvement High Frequency Rectification FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability Maximum Ratings
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FSU05A60
FSU05A60
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Untitled
Abstract: No abstract text available
Text: FRD Type : FSU05A60 OUTLINE DRAWING For Power Factor Improvement High Frequency Rectification FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability Maximum Ratings
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FSU05A60
FSU05A60
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FCU20A40
Abstract: FSU05B60 Tc117 tc112 FSU05A40 FSU05A60 FSU20B60 FSU15A40 FCU20A20 FCU20B60
Text: Fast Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline TO-220AC Full Pack FSF05A20 FSU05A20 FSU05A30 FSF05A40 FSU05A40 FSF05A60 FSU05A60 FSU05B60 200 200 300 400 400 600 600 600
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O-220AC
FSF05A20
FSU05A20
FSU05A30
FSF05A40
FSU05A40
FSF05A60
FSU05A60
FSU05B60
FSF10A20
FCU20A40
FSU05B60
Tc117
tc112
FSU20B60
FSU15A40
FCU20A20
FCU20B60
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Untitled
Abstract: No abstract text available
Text: 600 Volts 5A Avg. FSU05A60 FRED •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー
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FSU05A60
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FSU05A60
Abstract: No abstract text available
Text: FRD Type : FSU05A60 OUTLINE DRAWING For Power Factor Improvement High Frequency Rectification FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability Maximum Ratings
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FSU05A60
FSU05A60
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Untitled
Abstract: No abstract text available
Text: FRD Type：FSU05A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：力率改善用コンバータチョッパの高周波整流用 Application : For Power Factor Improvement High Frequency
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TypeFSU05A60
FSU05A60
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FSU05A60
Abstract: No abstract text available
Text: FRD Type：FSU05A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：力率改善用コンバータチョッパの高周波整流用 Application : For Power Factor Improvement High Frequency
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TypeFSU05A60
FSU05A60
FSU05A60
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Untitled
Abstract: No abstract text available
Text: FRD Type：FSU05A60 •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：力率改善用コンバータチョッパの高周波整流用 Application : For Power Factor Improvement High Frequency
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TypeFSU05A60
FSU05A60
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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Untitled
Abstract: No abstract text available
Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V
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FSU05A60
-FRD/5A/600V)
40ns/div
FSA06A60
GaN-SBD/6A/600V)
FSA04B60
O-220
FSA06B60
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