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Fix Supply BULK-FS-S2-16 Grade S2-24 Felt Sheet - 1/4" Th
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BULK-FS-S2-16	Bulk			1	1 $535.88 10 $535.88 100 $535.88 1000 $535.88 10000 $535.88	Buy Now

FSS216 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSS216		Sanyo Semiconductor	N-Channel Silicon MOSFET DC-DC Converter Applicati		Original	PDF

FSS216 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ta2143 Abstract: TA-2143 FSS216 1115M 32VDD Text: Ordering number:ENN5934A N-Channel Silicon MOSFET FSS216 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · 4V drive. unit:mm 2116 [FSS216] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source	Original	PDF	ENN5934A FSS216 FSS216] ta2143 TA-2143 FSS216 1115M 32VDD
ta2143 Abstract: TA-2143 FSS216 Text: Ordering number:ENN5934A N-Channel Silicon MOSFET FSS216 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · 4V drive. unit:mm 2116 [FSS216] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source	Original	PDF	ENN5934A FSS216 FSS216] ta2143 TA-2143 FSS216
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
2SK2437 Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process	OCR Scan	PDF	MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
K544 Abstract: k427 K669 c4433 k715 AL339 mosfet k544 A1782 K544 F B1235 Text: SAßSYO F T S . F T D t y p e p a c k a g e : T S S 0 P 8 S : s i n g 1 e , D : d 11 a 1 F S S . F W t y p e ( p a c k a g e ¡S Ó P 8 ) S : s i n g l e , W : d u a l • :T S S 0 P 8 \ V \ DSS ' d\ v) (A > \ 0 .8 1 T S S O P 8 , S O P S 1 2 2 3 Type M O S F E T s	OCR Scan	PDF	FTD2007I FTD2005I FTD2008Ã FSS110 FTD2003Â FTD2002I FTS2003Ã FTS2004I TF204 C2839 K544 k427 K669 c4433 k715 AL339 mosfet k544 A1782 K544 F B1235