FQI60N03L Search Results

FQI60N03L Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQI60N03L		Fairchild Semiconductor	30V LOGIC N-Channel MOSFET		Original	PDF
FQI60N03L		Fairchild Semiconductor	QFET N-CHANNEL		Scan	PDF

FQI60N03L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60n03l Abstract: 60n03 FQB60N03LTM fqb 60n03l Text: QFET TM FQB60N03L / FQI60N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQB60N03L FQI60N03L 60N03L FQB60N03LTM O-263 60n03l 60n03 fqb 60n03l
FQB60N03L Abstract: FQI60N03L Text: FQB60N03L / FQI60N03L April 2000 QFET TM FQB60N03L / FQI60N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	PDF	FQB60N03L FQI60N03L FQI60N03L
FQB60N03L Abstract: FQI60N03L Text: QFET TM FQB60N03L / FQI60N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQB60N03L FQI60N03L FQI60N03L
60uH Abstract: No abstract text available Text: QFET N-CHANNEL FQB60N03L, FQI60N03L FEATURES BVDSS = 30V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 18.5nC Typ.	Original	PDF	FQB60N03L, FQI60N03L FQB60N03L 60uH
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
FQB60N03 Abstract: No abstract text available Text: QFET N-CHANNEL FQB60N03L, FQI60N03L FEATURES B V qss = 30 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 18.5nC Typ.	OCR Scan	PDF	FQB60N03L, FQI60N03L 0135Q. FQB60N03
FQB60N03L Abstract: FQI60N03L 60nH Text: Q F E T N-CHANNEL FQB60N03L, FQI60N03L FEATURES BVqss = 30 V Advanced New Design r ds Avalanche Rugged Technology O N = 0.0135i2 lD =60A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k \|2-p a k	OCR Scan	PDF	FQB60N03L, FQI60N03L FQB60N03L FQI60N03L 60nH