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    FQB33N10 Price and Stock

    onsemi FQB33N10LTM

    MOSFET N-CH 100V 33A D2PAK
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    DigiKey FQB33N10LTM Reel 6,400 800
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    Newark FQB33N10LTM Reel 800
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    TME FQB33N10LTM 1
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    onsemi FQB33N10TM

    MOSFET N-CH 100V 33A D2PAK
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    DigiKey FQB33N10TM Reel
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    Avnet Americas FQB33N10TM Reel 0 Weeks, 2 Days 391
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    Bristol Electronics FQB33N10TM 33 3
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    Quest Components FQB33N10TM 26
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    TME FQB33N10TM 1
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    Fairchild Semiconductor Corporation FQB33N10LTM

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    Bristol Electronics FQB33N10LTM 552
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    Win Source Electronics FQB33N10LTM 3,495
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    Fairchild Semiconductor Corporation FQB33N10TM

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    Bristol Electronics FQB33N10TM 45
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    FQB33N10TM 3
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    Quest Components FQB33N10TM 36
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    FQB33N10TM 32
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    ComSIT USA FQB33N10TM 1,383
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    Win Source Electronics FQB33N10TM 7,933
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    Fairchild Semiconductor Corporation FQB33N10

    Electronic Component
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    ComSIT USA FQB33N10 200
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    FQB33N10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB33N10 Fairchild Semiconductor 100 V N-Channel MOSFET Original PDF
    FQB33N10L Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF
    FQB33N10LTM Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQB33N10LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 33A D2PAK Original PDF
    FQB33N10TM Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQB33N10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 33A D2PAK Original PDF

    FQB33N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB33N10 FQI33N10 FQB33N10TM O-263

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L / FQI33N10L September 2000 QFET TM FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB33N10L FQI33N10L FQI33N10L FQI33N10LTU O-262

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB33N10 FQI33N10 FQI33N10TU O-262 FQI33N10

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 / FQI33N10 October 2008 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB33N10 FQI33N10 FQI33N10

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 / FQI33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB33N10 FQI33N10 FQI33N10

    FQB33N10L

    Abstract: FQI33N10L
    Text: FQB33N10L / FQI33N10L October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB33N10L FQI33N10L FQI33N10L

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L / FQI33N10L September 2000 QFET TM FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB33N10L FQI33N10L FQB33N10LTM O-263

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L / FQI33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB33N10L FQI33N10L FQI33N10L

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L / FQI33N10L October 2008 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB33N10L FQI33N10L FQI33N10L

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB33N10L

    FQB33N10L

    Abstract: FQI33N10L
    Text: FQB33N10L / FQI33N10L September 2000 QFET TM FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB33N10L FQI33N10L FQI33N10L

    Untitled

    Abstract: No abstract text available
    Text: FQB33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB33N10

    FQB33N10

    Abstract: FQI33N10
    Text: FQB33N10 / FQI33N10 April 2000 QFET TM FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB33N10 FQI33N10 FQI33N10

    FQI33N10

    Abstract: FQB33N10
    Text: FQB33N10 / FQI33N10 October 2008 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB33N10 FQI33N10 FQI33N10

    huf75

    Abstract: FQB46N15 FQB33N10 HUF76639 IRLW530 huf75939
    Text: Part VDS Number V TO-263 N-Channel FDB5690 HUF76423S3S FQB30N06L HUF76419S3S FQB30N06 FQB20N06L FQB20N06 FQB13N06L FQB13N06 HUF75545S3S HUF75542S3S FQB90N08 FQB70N08 FQB58N08 FQB44N08 FQB24N08 FQB17N08L FQB17N08 FQB9N08L FQB9N08 HUF75645S3S HUF76645S3S FQB70N10


    Original     		PDF O-263 FDB5690 HUF76423S3S FQB30N06L HUF76419S3S FQB30N06 FQB20N06L FQB20N06 FQB13N06L FQB13N06 huf75 FQB46N15 FQB33N10 HUF76639 IRLW530 huf75939

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRF540NSPBF

    Abstract: mosfet .5a 100v 12061C104KAT2A 100v,33a FQB22P10TM FQB33N10TM IRF9540NSPBF MAX6496 fairchild mosfet selection guide
    Text: 19-0999; Rev 0; 9/07 MAX6496 Evaluation Kit The MAX6496 evaluation kit EV kit demonstrates a highvoltage, overvoltage-protection circuit for automotive applications that must survive load-dump and high-voltage transient conditions. This EV kit is a fully assembled


    Original     		PDF MAX6496 MAX6496 IRF540NSPBF mosfet .5a 100v 12061C104KAT2A 100v,33a FQB22P10TM FQB33N10TM IRF9540NSPBF fairchild mosfet selection guide