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    FDY302NZ Search Results

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    FDY302NZ Price and Stock

    onsemi FDY302NZ

    MOSFET N-CH 20V 600MA SC89-3
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    FDY302NZ Digi-Reel 1
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    FDY302NZ Cut Tape 1
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    Newark FDY302NZ Cut Tape 2 1
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    FDY302NZ Reel 3,000
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    ComSIT USA FDY302NZ 9,000
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    Avnet Silica FDY302NZ 143 Weeks 9,000
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    EBV Elektronik FDY302NZ 143 Weeks 3,000
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    Fairchild Semiconductor Corporation FDY302NZ

    MOSFET N-CH 20V SC-89-3
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    Win Source Electronics FDY302NZ 50,007
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    FDY302NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDY302NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V SC-89-3 Original PDF

    FDY302NZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TR-6010

    Abstract: FDY302NZ SC89
    Text: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ TR-6010 FDY302NZ SC89 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ PDF