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    Abstract: No abstract text available
    Text: UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features Description • RDS on = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP8N60ZU FDPF8N60ZUT

    FDPF8N60ZUT

    Abstract: No abstract text available
    Text: UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features Description • RDS on = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP8N60ZU FDPF8N60ZUT FDPF8N60ZUT

    FDPF8N60ZUT

    Abstract: N-Channel 600V MOSFET
    Text: UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features Description • RDS on = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP8N60ZU FDPF8N60ZUT FDPF8N60ZUT N-Channel 600V MOSFET