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onsemi FDP120N10 MOSFET N-CH 100V 74A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP120N10	Tube	226		1	1 $3.02 10 $3.02 100 $1.4382 1000 $1.08894 10000 $1.043	Buy Now
Avnet Americas	FDP120N10	Tube		8 Weeks	800	1 - 10 - 100 - 1000 $1.0192 10000 $0.9984	Buy Now
Mouser Electronics	FDP120N10		432			1 $3 10 $2.95 100 $1.42 1000 $1.04 10000 $1.04	Buy Now
Verical	FDP120N10		800		213	1 - 10 - 100 - 1000 $1.7625 10000 $1.7625	Buy Now
Newark	FDP120N10	Bulk			800	1 - 10 - 100 - 1000 $1.47 10000 $1.17	Buy Now

Onlinecomponents.com	FDP120N10					1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now
Rochester Electronics	FDP120N10		843		1	1 - 10 - 100 $1.41 1000 $1.17 10000 $1.05	Buy Now
Richardson RFPD	FDP120N10				800	1 - 10 - 100 - 1000 $1.04 10000 $1.04	Buy Now
Avnet Silica	FDP120N10		1,600	9 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDP120N10		200	10 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	FDP120N10		150		1	1 - 10 - 100 $4.96 1000 $4.58 10000 $4.58	Buy Now
Fairchild Semiconductor Corporation FDP120N10 100 V, 74 A, 12 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 74A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FDP120N10		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDP120N10 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP120N10		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 74A TO-220		Original	PDF

FDP120N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
FDP120N10 Contextual Info: FDP120N10 N-Channel PowerTrench 100V, 74A, 12mΩ tm MOSFET Features Description • RDS on = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP120N10 O-220 FDP120N10	PDF
Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
FDP120N10 Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10 FDP120N10	PDF
Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
Contextual Info: FDP120N10 N-Channel tm PowerTrench MOSFET 100V, 74A, 12mΩ Features Description • RDS on = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP120N10 O-220	PDF
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