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    FDMC86244 Search Results

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    FDMC86244 Price and Stock

    onsemi FDMC86244-L701

    FET 150V 134.0 MOHM MLP33
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    DigiKey FDMC86244-L701 Reel
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    Avnet Americas FDMC86244-L701 Reel 3,000
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    onsemi FDMC86244

    Power MOSFET, N Channel, 150 V, 9.4 A, 134 Milliohms, WDFN, 8 Pins, Surface Mount - Tape and Reel (Alt: FDMC86244)
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    Avnet Americas FDMC86244 Reel 0 Weeks, 2 Days 1,429
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    FDMC86244 Reel 10 Weeks 3,000
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    Mouser Electronics FDMC86244 4,420
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    Verical FDMC86244 6,000 655
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    FDMC86244 3,410 655
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    Newark FDMC86244 Reel 3,000
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    FDMC86244 Cut Tape 1
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    • 100 $0.756
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    Future Electronics FDMC86244 Reel 10 Weeks 3,000
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    Onlinecomponents.com FDMC86244
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    Rochester Electronics FDMC86244 9,410 1
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    TME FDMC86244 1
    • 1 $1.087
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    • 100 $0.657
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    Richardson RFPD FDMC86244 3,000
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    Avnet Asia FDMC86244 10 Weeks 3,000
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    Avnet Silica FDMC86244 3,000 11 Weeks 3,000
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    EBV Elektronik FDMC86244 12 Weeks 3,000
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    Flip Electronics FDMC86244 30,000
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    New Advantage Corporation FDMC86244 6,000 1
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    Fairchild Semiconductor Corporation FDMC86244

    Transistors
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    Vyrian FDMC86244 6,119
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    FDMC86244 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86244 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.8A POWER33 Original PDF
    FDMC86244-L701 onsemi FET 150V 134.0 MOHM MLP33 Original PDF

    FDMC86244 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC86244

    Abstract: No abstract text available
    Text: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86244 FDMC86244 PDF

    MO-240

    Abstract: No abstract text available
    Text: FDMC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC86244 MO-240 PDF

    3.3*3.3 mlp

    Abstract: No abstract text available
    Text: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86244 FDMC86244 3.3*3.3 mlp PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description ̈ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86244 PDF