FD1000FV Search Results

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FV • IF AV OUTLINE DRAWING Dimensions in mm Average forward current — . 800A Repetitive peak reverse voltage • •• 3500 ~ 4500V Reverse recovery charge ■■• . 1500//C

press-pack

Abstract: press pack mitsubishi thyristors 30 kv diode
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS SELECTION GUIDE BY FUNCTION 1. High-frequency rectifier diodes Voltage rating kv Current∗ rating(A) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 800 3.5 4.0 4.5 5.0 5.5 6.0 FD1000FX Press pack type FD1000FV Press pack type FD1000FH 1000

FD1000FV-90

Abstract: full wave rectifier diodes S10-27
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .800A

FD1000FV-90

Contextual Info: 三菱半導体〈高速スイッチング用整流ダイオード〉 FD1000FV-90 大電力高周波用 平形 FD1000FV-90 外形図 単位：mm 9 0.4min 15° 5 R4 f 60 21 ± 0.5 陰極 0.4 min 形名 f 60 ¡IF AV 平均順電流 …………………………… 800A

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 •V vv" Dimensions in mm V^ > * 0 / • lF AV Average forw ard c u rre n t. . 800A • V rrm Repetitive peak reverse voltage. 3500 ~ 4 5 0 0 V

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 • lF AV Average forw ard c u rre n t. . 800A • V Repetitive peak reverse voltage. . 3500 ~ 4500V

FT500BH

Abstract: transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S
Contextual Info: 三菱 大電力半導体／スタック編 三菱半導体〈大電力半導体〉 品種一覧表 形 名 •一般用整流ダイオード SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R

PS51259-AP

Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Contextual Info: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,

GTO thyristor

Abstract: 40A GTO thyristor GTO thyristor driver thyristor inverter circuit diagram THYRISTOR GTO GTO thyristor Application notes gto Gate Drive circuit vvvf speed control of 3 phase induction motor GTO gate drive unit Snubber circuits theory, design and application
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS MITSUBISHI HIGH POWER SEMICONDUCTORS FEATURE AND APPLICATIONAND OF GATE TURN-OFF THYRISTORS FEATURE APPLICATION OF GATE TURN-OFF THYRISTORS Gate turn-off GTO thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving

FD1000A-56

Abstract: FD3500AH Tf88 SR130L TF65 SR10A-8S FD1000A56 SR30D-8R SR130L-10S SR150L
Contextual Info: RECTIFIER D IO D E S • L O W AND MEDIUM POWER FOR GENERAL USE Max. ratings Repetitive peak reverse voltage Electrical characteristics Iran A 100 to 400 IpSwl M 1.0 (Ta = 4 0 ”C) Junction temperature V fc) 50 150 SR1G -4, 8, 12, 16 200 to 800 1.3(T l = 9 0 ’C)