F1008 Search Results

Contextual Info: polyfet rf devices F1008 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance

F1008

Contextual Info: polyfet rf devices F1008 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

UF10005CT

Abstract: TO-220AB
Contextual Info: UF10005CT U F1008CT ULTRA FAST GLASS PASSIVATED RECTIFIERS AB 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching

Contextual Info: polyfet rf devices F1008 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

m7101

Abstract: hp 2140 circuit diagram of motherboard uli m1573 m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic
Contextual Info: SERVICE MANUAL FOR 8317 BY: Sinty Zhang Repair Technology Research Department /EDVD Jun.2005 / R01 8317 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………….

U17792E

Abstract: CC78K0R ID78K0R-QB RA78K0R
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

E1007

Abstract: E4005 stk 403 - 130 green hills compiler v850 C CODE FOR V850E2 E3400 f3055 STK 442 130 V499 W3500
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

finemet

Abstract: MAGNETIC CORE CATALOG
Contextual Info: 重要なお知らせ http://www.hitachi-metals.co.jp http://www.hitachi-metals.co.jp 磁性材料カンパニー Information東京都港区芝浦一丁目 System Components 〒 105-8614 2 番Company 1 号（シーバンス N 館） （03）5765-4429 Fax.（03）5765-8319

Contextual Info: 2014.7 「ファインメット 」 EMC 総合カタログ 「ファインメット®」および「FINEMET®」は日立金属（株）の登録商標です。 ITやエレクトロニクス機器の小型化高性能化に伴い、電磁ノイズ対策は

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

78f1164

Abstract: 78F0881 78F0511 78F1165 78f0513 78F0511A 78f1826 78f0546 78F0550 70f3378
Contextual Info: Functions Supported by CubeSuite This is information about the next version of CubeSuite modules , etc.(2010/4 update) Product/module name Version CubeSuite V1.20 Integrated Development Environme V1.20 Debug Tool Common Interface V1.21 Device Information Common Interfa V2.00

e3150

Abstract: e1007 e2108 e2310 e2214 e1120 E2213 e2334 f3055 F2007
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

W2206

Abstract: E2108 f3055 e3150 E3007 E3242 E-2108 E2242 W3004 E3262
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

STEP UP transformer 110- 220V

Abstract: YM-208NDV 1000W 12v to 220v inverters circuit diagrams 1000w DC 12v to AC 220v 2km fm transmitter
Contextual Info: MITSUBISHI ELECTRIC INDICATORS and TRANSDUCERS Table of Contents Mechanical Indicators ᭿Overview and Features .3 ᭿Safety Precautions .5 ᭿Selection

E3141

Abstract: STK 412 tca850 e1007 StK 412 230 GHS multi V850 ld stk 2058 E30-10 e3113 E3400
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Siemens Ferrite B64290

Abstract: Siemens Ferrite n67 RM B66206-A2010 B65931CX22 B65535-B2 B66206J1106T1 B65820-B2001 L22 RM-8 B65611T250G48 b65935ax22
Contextual Info: Ferrite und Zubehör Ferrites and Accessories Lieferprogramm 2000 / Short Form Catalog 2000 http://www.epcos.com EPCOS AG Vorwort Preview Ferrite sind unverzichtbare Schlüsselkomponenten in vielen modernen Hochleistungstechnologien. Sie finden immer neue Anwendungen in der

e3208 03

Abstract: e2201 complex 11201A E1222 e1218 NT407 1620FE CC78K0 PC-9800 RA78K0
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

E1220 diode

Abstract: C9024 NEC 2703 F5022 E3206 ra78k0s RA78K0S diode e1220 e1212 e1218 E1220
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

UFF10005CT

Abstract: ITO-220AB UFF100 1002CT 1001CT UFF-100 UFF 100 04 uff10005 600V800V 1008CT
Contextual Info: THUR UFF10005CT UFF 1008CT ULTRA FAST GLASS PASSIVATED RECTIFIERS ITO-220AB 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications

F11080GB

Abstract: ft-1km F6045GB F200160PB F140100 F7555G F7555GB F1AH0050 F10080G F4424G
Contextual Info: Features FINEMET FT-3 has lower magnetostriction than FT-1 and as a result has less audible noise emission. FINEMET FT-3 has excellent audible and RF noise supression performance due to it's high impedance relative permeability, when compared to Mn-Zn and Ni-Zn ferrite cores at frequency range of 10kHz to 100MHz.

alocrom 1200

Contextual Info: P ^ jp iG E C P L E S S E Y DS3538-1.1 F1001/04/08/10 HIGH POWER WAVEGUIDE RESONANCE ISOLATORS * L, S & C BAND COVERAGE * HIGH POWER CAPABILITY This data sheet describes a range of high-power water and aircooled waveguide resonance isolators covering the frequency range 1.215 to 6.4GHz suitable for radar and communication applications.

K2313

Contextual Info: AUGUST’14 ® FINEMET ® is a registered trademark of Hitachi Metals, Ltd. As IT and electronic devices become small and improve its performance, issues of electromagnetic noise are addressed. EMC regulations for those