ESAD83M Search Results

ESAD83M-004

Contextual Info: ESAD83M-004 30A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design I Applications High speed power switching ■ Maximum Ratings & Characteristics

W2212

Contextual Info: ESAD83M-004R 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

wf34

Contextual Info: ESAD83M-006R 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD83M-004

Contextual Info: ESAD83M-004 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD83M

Abstract: esad83m-004
Contextual Info: ESAD83M-004 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

Contextual Info: ESAD83M-006R 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain

ESAD83M

Contextual Info: http://www.fujisemi.com ESAD83M-006RR FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 60 V Isolating voltage

ESAD83M-006R

Contextual Info: ESAD83M-006R 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD83M

Abstract: ESAD83M-006
Contextual Info: ESAD83M-006 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

Contextual Info: ESAD83M-004R 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain

Contextual Info: ESAD83M -004 3 oa S' a v M* — : Outline Drawings SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . • i&vF m nm m m Low V F Connection Diagram Super high speed sw itchin g. High reliability by planer design. : Applications • M X 9 * J x 4 - y * > 'r

Contextual Info: ESAD83M-006 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

C4020

Abstract: ESAD83M-006
Contextual Info: ESAD83M-006 30A • Outline Drawing scHOTTKY b a r r i e r d io d e ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics

Contextual Info: ESAD83M-004R 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD83M

Abstract: esad83m-004rr
Contextual Info: http://www.fujisemi.com ESAD83M-004RR FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units 48 V 40 V Repetitive peak surge reverse voltage VRSM

A525

Contextual Info: ESAD83M -006 3oa SCHOTTKY BARRIER DIODE Features I n s u la t e d p a c k a g e b y f u lly m o l d i n g . • i&Vp Low V F C onnection Diagram S u p e r h ig h speed s w itc h in g . • -* u - i —&mz ¿ s s is f i t t H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: ESAD83M-004 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

A527

Abstract: ESAD83M-006 A526
Contextual Info: ESAD83M-006I30A t - F SCHOTTKY BARRIER DIODE Features Insulated package by fu lly m o ld in g • ffeVF Low Vp 7JZ-Y1f * C onnection D iagram S up er high speed s w itc h in g . H igh reliability by pla n e r design. • rV i "A p p lic a tio n s D

ESAD83M-004R

Contextual Info: ESAD83M-004R 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD83M-006

Contextual Info: ESAD83M-006 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A