EPC8002 Search Results
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EPC8002 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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EPC8002 | EPC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 65V 2.7A BUMPED DIE | Original | |||
EPC8002ENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE | Original | |||
EPC8002TENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE | Original |
EPC8002 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in |
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EPC8002 EPC8002 | |
EPC8004Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been |
Original |
AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 |