Untitled
Abstract: No abstract text available
Text: EPC2015 eGaN FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure
|
Original
|
PDF
|
EPC2015
EPC2015
|
Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
|
Original
|
PDF
|
EPC2015
|
Untitled
Abstract: No abstract text available
Text: 1 A 2 4 3 5 6 A 7 - 12 Vdc U3 MCP1703 J1 8 1 2 7 CON2 C4 1uF, 25V 6 OUT NC NC NC NC GND 1 VCC 2 C11 1uF, 25V 3 C4 1uF, 25V 4 9 GND 5 IN NC A 1 2 3 4 VDD D5 D4 D3 D2 4 3 2 1 11 9 B J6 CON4 R11 Zero VDD HB HOH HS HOL 10 C16 4.7uF, 50V D6 Optional LOH 11 EPC2015
|
Original
|
PDF
|
MCP1703
EPC2015
03U40
LM5113
NC7SZ08L6X
NC7SZ00L6X
|
EPC2015
Abstract: EPC Gan transistor FX-93 micrometer
Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
|
Original
|
PDF
|
EPC2015
EPC2015
EPC Gan transistor
FX-93
micrometer
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 6 A A TP40 Keystone 5015 5V U10 NC7SZ08L6X 2 5VHS 33 Ohm C20 100nF, 25V R13 Y DNP J10 U20 LM5113 Lin 4 3 2 1 Hin 5V D10 40V 30mA C14 100pF, 25V C12 100nF, 25V .1" Male Vert. 1 GUL 1 GUH GUL 5 SWNode R40 2 1 Ohm 5VHS 3 4 Vsup J40 GUH SWNode 2 Vsup
|
Original
|
PDF
|
NC7SZ08L6X
100nF,
100pF,
LM5113
70VDC
EPC2015
NC7SZ00L6Xn
|
Untitled
Abstract: No abstract text available
Text: Figure 3: Proper Measurement of Switch Node – OUT Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 500kHz Buck converter CH1: Switch node voltage (VSW) - CH2: PWM input voltage (VPWM) NOTE. The EPC9002 development board does not have any current or thermal protection on board.
|
Original
|
PDF
|
500kHz)
EPC9002
EPC2001
|
Untitled
Abstract: No abstract text available
Text: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A 500kHz Buck converter CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9001 development board does not have any current or thermal protection on board.
|
Original
|
PDF
|
500kHz)
EPC9001
EPC2015
|
Untitled
Abstract: No abstract text available
Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9107 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not
|
Original
|
PDF
|
EPC9107
|
Untitled
Abstract: No abstract text available
Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9101 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not
|
Original
|
PDF
|
EPC9101
|
Untitled
Abstract: No abstract text available
Text: D C B A VOUT 1 C3 C1 220pF C2 MODE TRK/SS VCC R2 15k 22pF 0.1uF, 25V R8 39.2k R7 Zero Opt 6 5 4 3 2 S- RUN C5 S+ EXT 2 MODE 100k R12 R11 560k 11 12 13 14 0.1uF, 25V C7 16 15 R9 2.2 IntVCC PGND BG SW TG Boost VIN U1 LTC3833 R10 10.0k C18 Optional VIN PGOOD
|
Original
|
PDF
|
220pF
LTC3833
100pF
SDM03U40
LM5113TM
270nH
EPC9101
EPC2015
|
Untitled
Abstract: No abstract text available
Text: Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/25 A 1000kHz Buck converter CH2: Switch node voltage (VSW) – CH4: PWM input voltage (VPWM) NOTE. The EPC9016 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – VSW
|
Original
|
PDF
|
1000kHz)
EPC9016
EPC2015
|
KEYSTONE 5015
Abstract: No abstract text available
Text: D C B 1 TRACK SYNC EXT C2 C3 150pF 22pF R7 Opt R5 Zero VCC R2 18k 0.1uF, 25V TRK/SS R4 10.0k 47pF C12 MODE TRK/SS PGOOD Rev. 1.0 1 Demonstration Board – EPC9107 Schematic C1 R3 45.0k VOUT Remote Sensing 1k R14 Keystone 5015 1 TP9 VCC 1k R13 Keystone 5015
|
Original
|
PDF
|
150pF
EPC9107
LTC3833
SDM03U40
LM2766M6
EPC2015
HCF1305-1R0
100uF,
KEYSTONE 5015
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 6 A A COTP40 TP40 5V PIU1002 B B PIJ1003 PIU1004 PIC20 1 PIC20 2 PIR1303 PIR1302 PID1002 5V PIJ1001 PIC1201 PIC1202 .1" Male Vert. COU20 U20 LM5113SD PIC1401 6 5 PIU2006 PIU2005 Lin 10k PIR1401 U11 COU11 NC7SZ00L6X A NLGUL GUL COR41 R41 1PIR4101
|
Original
|
PDF
|
COTP40
PIU1004
PIR1303
PIR1302
PIU103
PID1002
PIJ1001
PIC1201
PIC1202
COU20
|
