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United Chemi-Con Inc EMVY630GTR471MLN0S Aluminum Electrolytic Capacitors - SMD 470uF 63 Volts 20%
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EMVY630GTR471MLN0S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Nippon capacitors Abstract: MRF6S19120H Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19120H IS--95 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors	PDF
ATC100B102JP50XT Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with	Original	MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-	Original	MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3	PDF
JA02 Abstract: EMVY160 Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1,000 to 5,000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES	Original	100Vdc 000-hours-life 63Vdc) 100Vdc) 120Hz) EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G JA02 EMVY160	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRFE6P9220H MRFE6P9220HR3	PDF
Chemi-Con DATE CODES Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi	PDF
EMVY160 Abstract: EMVY250ADA EMVY350 EMVY500G*102MMN0S EMVY350ADA470MF55G EMVY160ADA101MF55G EMVY350ADA470 EMVY350ADA4R7MD55G EMVY250GTR102MMH0S EMVY250 Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1000 to 5000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES	Original	100Vdc 5000-hours-life 63Vdc) 100Vdc) 120Hz) 3VDA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY160 EMVY250ADA EMVY350 EMVY500G*102MMN0S EMVY350ADA470MF55G EMVY160ADA101MF55G EMVY350ADA470 EMVY350ADA4R7MD55G EMVY250GTR102MMH0S EMVY250	PDF
Untitled Abstract: No abstract text available Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1,000 to 5,000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES	Original	100Vdc 000-hours-life 63Vdc) 100Vdc) 120Hz) EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G	PDF
T491X106K035AT Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 T491X106K035AT A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3 Nippon capacitors Nippon chemi	PDF
MRF6S19120H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930	Original	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 MRF6S19120H	PDF
nippon capacitors Abstract: Nippon chemi Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220H MRF6P9220HR3 MRF6P9220H nippon capacitors Nippon chemi	PDF
J698 Abstract: NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRFE6P9220H MRFE6P9220HR3 J698 NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi	PDF
UT-141C-50-SP Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-	Original	MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 UT-141C-50-SP 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H	PDF