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    EGN21C320IV Search Results

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    Contextual Info: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		EGN21C320IV 14GHz 14GHz 25deg PDF

    vp 3082

    Abstract: 17806
    Contextual Info: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C320IV 14GHz 14GHz -j100 vp 3082 17806 PDF