EA20QS06 Search Results

Contextual Info: SBD Type：EA20QS06 EA20QS0620QS06-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification

EA20QS06

Contextual Info: SBD Type : EA20QS06 EA20QS06 OUTLINE DRAWING FEATURES * TO-251AA Case * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating Symbol EA20QS06 Unit Repetitive Peak Reverse Voltage

EA20QS06-F

Contextual Info: 1.7A Avg. 60 Volts SBD EA20QS06-F •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

Contextual Info: SBD Type : EA20QS06 EA20QS06 OUTLINE DRAWING FEATURES * TO-251AA Case * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating Symbol EA20QS06 Unit Repetitive Peak Reverse Voltage

tc122 20 5 3

Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85

EA20QS06

Abstract: EA20QS06-F
Contextual Info: SBD Type : EA20QS06 EA20QS060QS06-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mounting Device * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel Maximum Ratings

Contextual Info: fift Nihon Inter Bectronics Corporation 1.7A Avg 60 Volts X SBD EA20QS06 EA20QS06-F ^ MAXIMUM RATINGS Rating •OUTLINE DRAWING(mm ' . Type: Symbol''''-'-^ E A 20Q S06 E A 2 0 Q S 0 6 -F Unit V RRM 60 V 65 V > < '■) & L G - 7 $ ytf if Repetitive Peak Reverse Voltage

EA20QS06

Contextual Info: SBD Type : EA20QS06 EA20QS06 OUTLINE DRAWING FEATURES * TO-251AA Case * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available Maximum Ratings Approx Net Weight:0.35g Rating Symbol EA20QS06 Unit Repetitive Peak Reverse Voltage

EA20QS06

Contextual Info: 1.7A Avg. 60 Volts SBD EA20QS06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

Contextual Info: SBD Type : EA20QS06 EA20QS060QS06-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mounting Device * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel Maximum Ratings

EA20QS06

Abstract: EA20QS06-F
Contextual Info: SBD Type : EA20QS06 EA20QS060QS06-F OUTLINE DRAWING FEATURES * TO-252AA Case, Surface Mounting Device * Low Forward Voltage drop * Low Power Loss * High Surge Capability * 40 Volts thru 100 Volts Types Available * Packaged in 16mm Tape and Reel Maximum Ratings

Contextual Info: 1.7A Avg. 60 Volts SBD EA20QS06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

Contextual Info: SBD Type：EA20QS06 EA20QS06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EA20QS06 EA20QS06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EA20QS06 EA20QS06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:0.35g ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：EA20QS06 EA20QS0620QS06-F •OUTLINE DRAWING 構造 ：表面実装型ショットキバリアダイオード S B D Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification

DE5S4M

Abstract: CJ26 DIFS4 100L 151MQ30 151MQ40 AK03 AK04 AK06 AK09
Contextual Info: - 98- m m % 151MQ30 151MQ40 AK03 AK04 AK06 AK09 CB803—02 D1FS4 D1FS4A D1FS6 D1NS4 D1NS6 D2FS4 D2S4M D2S6M D3FS4A D3S4M D3S6M D5S4M D5S6M D5S9M DE3S4M DE3S6M DE5S4M DE5S6M E10QS03 E10QS04 E10QS05 E10QS06 E10QS09 ElOQSlO EA20QS03 EA20QS03-F EA20QS04 EA20QS04-F

D5S9M

Abstract: DE5S4M DIFS4 100L 151MQ30 151MQ40 AK03 AK04 AK06 AK09
Contextual Info: - 98- m % 151MQ30 151MQ40 AK03 AK04 AK06 AK09 C B 8 0 3 —02 D1FS4 D1FS4A D1FS6 D1NS4 D1NS6 D2FS4 D2S4M D2S6M D3FS4A D3S4M D3S6M D5S4M D5S6M D5S9M DE3S4M DE3S6M DE5S4M DE5S6M E10QS03 E10QS04 E10QS05 E10QS06 E10QS09 ElOQSlO EA20QS03 EA20QS03-F EA20QS04 EA20QS04-F

DE5S4M

Abstract: DIFS4 100L 151MQ30 151MQ40 AK03 AK04 AK06 AK09 CB803-02
Contextual Info: - 98- m % m tt £ AK06 AK09 C B 8 0 3 —02 D1FS4 D1FS4A D1FS6 D1NS4 D1NS6 D2FS4 D2S4M D2S6M D3FS4A D3S4M D3S6M D5S4M D5S6M D5S9M DE3S4M DE3S6M DE5S4M DE5S6M E10QS03 E10QS04 E10QS05 E10QS06 E10QS09 ElOQSlO EA20QS03 EA20QS03-F EA20QS04 EA20QS04-F EA20QS05 EA20QS05-F

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

DIFS4

Abstract: D5S6M DE5S4M 100L 151MQ30 151MQ40 AK03 AK04 AK06 AK09
Contextual Info: - 98- m m % 151MQ30 151MQ40 AK03 AK04 AK06 AK09 CB803—02 D1FS4 D1FS4A D1FS6 D1NS4 D1NS6 D2FS4 D2S4M D2S6M D3FS4A D3S4M D3S6M D5S4M D5S6M D5S9M DE3S4M DE3S6M DE5S4M DE5S6M E10QS03 E10QS04 E10QS05 E10QS06 E10QS09 ElOQSlO EA20QS03 EA20QS03-F EA20QS04 EA20QS04-F

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

DE5S4M

Abstract: DINS4 100L 151MQ30 151MQ40 AK03 AK04 AK06 AK09 CB803-02
Contextual Info: - 98- m % m tt £ AK06 AK09 C B 8 0 3 —02 D1FS4 D1FS4A D1FS6 D1NS4 D1NS6 D2FS4 D2S4M D2S6M D3FS4A D3S4M D3S6M D5S4M D5S6M D5S9M DE3S4M DE3S6M DE5S4M DE5S6M E10QS03 E10QS04 E10QS05 E10QS06 E10QS09 ElOQSlO EA20QS03 EA20QS03-F EA20QS04 EA20QS04-F EA20QS05 EA20QS05-F