DS504
Abstract: LocalLink
Text: SPI-3 Link Layer v5.1 DS504 August 8, 2007 Product Specification Introduction LogiCORE Facts The Xilinx LogiCORE SPI-3 Link Layer core provides a complete, pre-engineered solution that is fully compatible with the OIF-SPI3-01.0 System Packet Interface Level-3 standard. Implementation Agreement. This
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DS504
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DS5049
Abstract: No abstract text available
Text: SP8902 Bare Die 6.5GHz ÷ 2 Fixed Modulus Divider Advance Information DS5049 FEATURES ● Very High Operating Speed ● Operation down to DC with square wave input ● Silicon Technology for low Phase Noise typically better than -140dBc/Hz at 1KHz ● 5V Single Supply Operation
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SP8902
DS5049
-140dBc/Hz
335mW
SP8902/KG/1CAC
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Untitled
Abstract: No abstract text available
Text: CP3UB26 Reprogrammable Connectivity Processor with USB and CAN Interfaces 1.0 General Description The CP3UB26 connectivity processor combines high performance with the massive integration needed for embedded applications. A powerful RISC core with on-chip SRAM
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CP3UB26
CP3UB26
LQFP-128
LQFP-144
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EE CORE 70
Abstract: books national semiconductor
Text: CP3UB26 CP3UB26 Reprogrammable Connectivity Processor with USB and CAN Interfaces Literature Number: SNOSAE7D CP3UB26 Reprogrammable Connectivity Processor with USB and CAN Interfaces 1.0 General Description The CP3UB26 connectivity processor combines high performance with the massive integration needed for embedded applications. A powerful RISC core with on-chip SRAM
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CP3UB26
CP3UB26
EE CORE 70
books national semiconductor
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Untitled
Abstract: No abstract text available
Text: CP3UB26 www.ti.com SNOSAE7E – APRIL 2005 – REVISED JANUARY 2014 CP3UB26 Reprogrammable Connectivity Processor with USB Interface 1 GENERAL DESCRIPTION The CP3UB26 connectivity processor combines high performance with the massive integration needed for
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CP3UB26
CP3UB26
12-bit
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D-P4DW
Abstract: D5032 SMC C96 st 083 GKM30-54 CP96SD BA4-040 C96SD D-J59 F5063
Text: ISO Cylinders ø32, ø40, ø50, ø63, ø80, ø100, ø125 • CNOMO and circular grooves are set on all four sides. • Switch can slide in. Profile Design ISO Cylinder Series CP96 Series C96 Variations Series Action Series CP96 Standard Double acting Type
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CP96/C96
13500DN
D-P4DW
D5032
SMC C96
st 083
GKM30-54
CP96SD
BA4-040
C96SD
D-J59
F5063
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ccp protocol
Abstract: automotive ecu manual renesas M32176 PMSM simulink model cmos circuit simulink example matlab code for 2 bit updown counter M32R RTD renesas M32R ES600 m32174
Text: 2003.10 Renesas Microcomputer M32R/ECU Series 2003.10 www.renesas.com Single-chip, 32-bit RISC Microcontrollers Ideal for Automotive Applications and for Industrial and Audio/Video Appliance Control Large-capacity, fast-reprogrammable on-chip flash memory
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M32R/ECU
32-bit
REJ01B0006-0101Z
ccp protocol
automotive ecu manual
renesas M32176
PMSM simulink model
cmos circuit simulink example
matlab code for 2 bit updown counter
M32R RTD
renesas M32R
ES600
m32174
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MIL-W-85
Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
Text: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .
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DS-101
DS-102
DS-103
DS-104
DS-105
DS-106
DS-107
DS-108
DS-109
DS-110
MIL-W-85
WR340 half height flange
wr 2300 flange waveguide
GSK90-1-S GASKET
Waveguide Gaskets
WR340 waveguide directional coupler
wr 90 directional coupler
wr 2300 waveguide
RCC42
wr 90 x band flange waveguide
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Untitled
Abstract: No abstract text available
Text: power supply_본문_인쇄용_2010.06.01_Power Supply_2010_ 10. 06. 01 오후 7:31 페이지 166 DC DC DS50, DS100 DS • ■ SERIES Features: DS50-1205 DS50-1205 • 50 Watt, 100 Watt ■ Small size Small size ■ DC input voltage ■••Small size voltage
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DS100
DS50-1205
AC500V
100mA,
DS100-S
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AEH 5PIN
Abstract: atdr1 DS021 IR CP3UB26 CR16C LQFP-144 CVSD pcm EE CORE 70
Text: CP3UB26 Reprogrammable Connectivity Processor with USB and CAN Interfaces 1.0 General Description The CP3UB26 connectivity processor combines high performance with the massive integration needed for embedded applications. A powerful RISC core with on-chip SRAM
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CP3UB26
CP3UB26
LQFP-128
LQFP-144
AEH 5PIN
atdr1
DS021 IR
CR16C
CVSD pcm
EE CORE 70
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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ITH08C06A
Abstract: ITH08C06B T0220AB T0-263
Text: ITH08C06 MITEL SEM ICON D UCTOR High Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes O ctober 1998, version DS5044-1.2 DS5044-2.0 April 1999 The ITH08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITH08C06
DS5044-1
DS5044-2
ITH08C06
T0220AB
T0263
ITH08C06A
ITH08C06B
T0220AB
T0-263
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ITH60C06
Abstract: No abstract text available
Text: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5048-1.1 O ctober 1998 T h e IT H 6 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH60C06
DS5048-1
ITH60C06
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Untitled
Abstract: No abstract text available
Text: SP8902 Bare Die M ITEL 6.5GHz -f 2 Fixed Modulus Divider S E M IC O N D U C T O R A dvance Inform ation DS5049 FEATURES • Very High Operating Speed • Operation down to DC with square wave input • Silicon Technology for low Phase Noise typically better than -140dBc/Hz at 1KHz
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DS5049
SP8902
-140dBc/Hz
335mW
SP8902/KG/1CAC
SP8902
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Untitled
Abstract: No abstract text available
Text: ITH08C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5044-1.2 O ctober 1998 T h e IT H 0 8 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH08C06
DS5044-1
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Untitled
Abstract: No abstract text available
Text: ITH23C06 MITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5046-1.1 October 1998 T h e IT H 2 3 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH23C06
DS5046-1
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ITH13C06
Abstract: ITH13C06B T0220AB T0247
Text: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R With Ultrafast Diode Supesedes O ctober 1998, version DS5045-1.2 The ITH13C 06 is a very robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH13C06
DS5045-1
DS5045-2
ITH13C06
T0263
T0268
T0220AB
T0247
ITH13C06B
T0220AB
T0247
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Untitled
Abstract: No abstract text available
Text: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT SEMICONDUCTOR With Ultrafast Diode Supesedes March 1999, version DS5045-2.1 The IT H 1 3 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH13C06
DS5045-3
DS5045-2
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Untitled
Abstract: No abstract text available
Text: ITH13C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5045-1.2 O ctober 1998 T h e IT H 1 3 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH13C06
DS5045-1
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ITH23C06P
Abstract: T0247
Text: ITH23C06 MITEL SEM ICON D UCTOR High Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes O ctober 1998, version DS5046-1.1 DS5046-2.0 April 1999 The ITH23C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITH23C06
DS5046-1
DS5046-2
ITH23C06
ITH23C06P
T0247
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Untitled
Abstract: No abstract text available
Text: ITH40C06 MITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5047-1.1 October 1998 T h e IT H 4 0 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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ITH40C06
DS5047-1
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ITH40C06P
Abstract: T0247 DIODE 5035 ITH40C06
Text: ITH40C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5047-1.1 O ctober 1998 T h e IT H 4 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range
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ITH40C06
DS5047-1
ITH40C06
ITH40C06P
T0247
DIODE 5035
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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