DRC2114W Search Results

DRC2114W

Abstract: DRA2114W ZJH00389BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC2114W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2114W • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

Contextual Info: Doc No. TT4-EA-11595 Revision. 2 Product Standards Transistors with Built-in Resistor DRC5114W0L DRC5114W0L Silicon NPN epitaxial planar type Unit: mm For digital circuits DRC2114W in SMini3 type package 2.0 0.3 0.13 3 • Features 1.25 2.1  Low collector-emitter saturation voltage Vce sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC2114W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2114W • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC2114W (Tentative) Silicon NPN epitaxial planar type For digital circuits • Absolute Maximum Ratings Ta = 25°C Parameter  Package  Code Mini3-G3-B  Pin Name 1: Base 2: Emitter 3: Collector

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114W Silicon NPN epitaxial planar type For digital circuits DRC2114W in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, mount area reduction

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC5114W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5114W DRC2114W in SMini3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114W Silicon NPN epitaxial planar type For digital circuits DRC2114W in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, mount area reduction

Contextual Info: Doc No. TT4-EA-11737 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2114W0L DRC2114W0L Silicon NPN epitaxial planar type Unit: mm 2.9 For digital circuits 0.4 0.16 3 • Features 1.5 2.8  Low collector-emitter saturation voltage Vce sat

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.