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    QAL22V10-30L

    Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
    Text: GAL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating


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    PDF bS0112b D0b7b45 GAL22V10, 24-pin GAL22V10 tl/l/10406-19 tl/l/10406-20 TL/L/10406-21 QAL22V10-30L PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL Gate Array Logic