DDB33 Search Results

BLW90

Abstract: fi37
Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

DME3256

Abstract: DMJ4708 DMJ4317 sms1046 DMJ6575 DMF-5845 DMF5848 DMF3383 DME3255 sampling phase detector SPD
Contextual Info: Section 5 Receiving Diodes Table of Contents Schottky Mixer and Detector Diodes in Surface Mount Plastic Packages . 5-3 Ceramic Chip-on-Board Mixer Quads . 5-10

Contextual Info: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

DDA09

Contextual Info: CYM7232 CYM7264 DRAM Accelerator Module PRELIMINARY CYPRESS SEMICONDUCTOR Features • 4-megabyte to 1-gigabyte control ca­ pability • 32- or 64-bit bus interface M7232 only • 32* or 64-bit EDC versions — 1-bit correct; 2-bit detect • Multiplexed or non-multiplexed bus

FUSE f10l 250v

Abstract: ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a lambda LMS Zener C218 fbt 073 12v to 230v inverters circuit diagrams sfbt-00 FBL-00-243 FBL-00 FBM-Z
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLY LL S-7000 SERIES This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent of Lambda Electronics. All information contained herein

Contextual Info: 3 Morris? HS-82C37ARH Radiation Hardened CMOS High Performance Programmable DMA Controller August 1995 Features Description • Radiation Hardened The Harris HS-82C37ARH is an enhanced, radiation hardened CMOS version of the industry standard 8237A Direct Memory Access DMA) controller, fabricated using the

sda 5241

Abstract: SDA5241 s0003
Contextual Info: SIEM ENS Data Slicer for Teletext SDA 5231-5 Preliminary Data Bipolar IC Features • Crystal-stable data clock regeneration for a bit rate Of 6.9375 MHz • Separation and regeneration of teletext information • Separation of the horizontal and vertical synchroni­

3T160

Abstract: ORP10 NT80
Contextual Info: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e

DDB3268-000

Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
Contextual Info: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

E58127 lei-4

Abstract: E58127
Contextual Info: •C M O M DB TYPE P M U T M l i m m PART NUMBER SINGLE 115V 6 PIN DUAL 115/230V 8 PIN DB-2-10 DB-2-12 DB-2-16 DB-2-20 DB-2-24 DB-2-28 DB-2-36 DB-2-48 DB-2-56 DB-2-120 DB-3-10 DB-3-12 DB-3-16 DB-3-20 DB-3-24 DB-3-28 DB-3-36 DB-3-48 DB-3-56 DB-3-120 DB-4-10

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

CDB-7606

Abstract: CDB7606-000
Contextual Info: Silicon Schottky Barrier Detector Diodes S3 A lp h a CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

Contextual Info: HS-2510RH HARRIS S E M I C O N D U C T O R Radiation Hardened High Slew Rate Operational Amplifiers August 1995 Features Description High Slew Rate 50V/ns Min , 65V/(is (Typ) • The HS-2510RH is a radiation hardened high performance operational amplifier which set the standard for maximum

Contextual Info: / S T * • / # . S G S - T H O M S O N M D @ K B J S e iM D lg E T C 5 0 6 4 /6 4 - X E T C 5 0 6 7 /6 7 - X SERIAL INTERFACE CODEC/FILTER WITH RECEIVE POWER AMPLIFIER ■ COMPLETE CODEC AND FILTERING SYS­ TEM INCLUDING : . Transmit high-pass and low-pass filtering.

e154515

Abstract: E58127 e154515 class b E154515 class f E78675 DB712 e154515 class E1545 DB424 DB-6-48
Contextual Info: p C ÊIIH J OS m p n J M F Û W S PART NUMBER SINGLE 115V 6 PIN DUAL 115/230V 8 PIN DB-2-10 DB-2-12 DB-2-16 DB-2-20 DB-2-24 DB-2-28 DB-2-36 DB-2-48 DB-2-56 DB-2-120 DB-3-10 DB-3-12 DB-3-16 DB-3-20 DB-3-24 DB-3-28 DB-3-36 DB-3-48 DB-3-56 DB-3-120 DB-4-10 D8-4-12

Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V

Contextual Info: April 1997 MgLMicro Linear ML4880 Portable PC/PCMCIA Power Controller GENERAL DESCRIPTION FEATURES The ML4880 Portable PC and PCMCIA Power Controller is a complete solution for DC/DC power conversion for portable computing systems with single or multiple PCMCIA slots.

sampling phase detector SPD

Abstract: DMJ4317 DDC2351-024 SMS3994 SPD3465 DMF3383 DMJ4708 DIODE+CQ+521 transistor+SMD+520
Contextual Info: Section 5 Receiving Diodes Table of Contents Schottky Mixer and Detector Diodes in Surface Mount Plastic Packages . 5 -3 Ceramic C hip-on-B oard Mixer Quads .

transistor tt 2222

Abstract: ic TT 2222 BLW 89 blw89 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Contextual Info: NMC27C128BN NATL SEMICOND MEMORY 31E D • bSOllSt, OGt>33fe,l S National Semiconductor PRELIMINARY NMC27C128BN High Speed Version 131,072-Bit (16k x 8) One Time Programmable CMOS PROM General Description Features The NMG27C128BN is a high-speed 126k one time pro­

fbt00138

Abstract: lambda transistor FBNL110 FBNL 170 fbt-00 fbt 073 FBMZ-189 LLS-7060 CBS-12-281 FBNL-110 sj 2025
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLY r, / LLS-7000 SERIES This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent of Lambda Electronics. All information contained herein

Contextual Info: International ^R ectifier P D -9 .1 3 0 4 A IRF3205S PRELIMINARY H EXFET Pow er M O S F E T • • • • • • • Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

BLW84

Abstract: DB333 GP 809 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: PHILIPS INTERNATIONAL b 5E D m 7 11 0 02 b 0D b333ñ 7 b l IPHIN BLW84 V.H.F. POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and Coperated v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to with­

DDL6672-006

Abstract: DDB3267 DDB4719-000 DDB4517-000 DDB4517-006 DDB6673-000 DDB6673-094 DDL6672-000 DDL6725-000 DDB5098-000
Contextual Info: Silicon Schottky Barrier Detector Diodes B A Ip h CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications