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    CLT2130

    Abstract: CLT2160 CLT2150 CLT2140 T018
    Text: L 40E » Ea DDD10D3 7 SENI "P41-UÌ FASCO INDS/ SENISYS CLT2130 CLT2140 CLT2150 G.r CLT2160 Silicon Planar Epitaxial Phototransistors ±.007 f— J83 N A — H J WINDOW [ I n t.o n H— ±.oio .0 4 0 i I .147 O I A _ 1 GENERAL DESCRIPTION — The Clairex CLT2130,


    OCR Scan     		PDF GDD10D3 P41-U1 CLT2130 CLT2140 CLT2150 CLT2160 CLT2140, CLT2150, CLT2160 CLT2150 T018

    TTL 7464

    Abstract: No abstract text available
    Text: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles)


    OCR Scan     		PDF DDD10DÃ HC7464 TTL 7464

    Untitled

    Abstract: No abstract text available
    Text: OMD75N06ML OMD38L60ML OMD6ONIOML OMD32F6QML Preliminary Data Sheet 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules With Internal Gate Drive, 3-Phase Bridge Configuration FEATURES • • • • •


    OCR Scan     		PDF OMD75N06ML OMD38L60ML OMD32F6QML DDD10D3 534-5776fax