BTAJ6
Abstract: si268 ha5105
Text: 30E » H 7^5^ 237 DD31S4Ô 1 • ^ Z S ~ \S V 7 S G S -T H O M S O N k7 # M œ m iO T T IH M D ! S G S-THOMSON B TA 16 B W SNUBBERLESS TRIACS ■ Itrms = 16 A at Tc = 80 °C. ■ Vdrm : 200 V to 800 V. ■ ■ ■ ■ Iq t = 50 mA Ql-ll-lll . GLASS PASSIVATED CHIP.
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OCR Scan
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DD31S40
E81734)
CB-415)
BTAJ6
si268
ha5105
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Untitled
Abstract: No abstract text available
Text: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit
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OCR Scan
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KM29N16000ERS
-TSOP2-400F
-TSQP2-400R
b4142
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BTA 16
Abstract: BTA 112
Text: 30E D • 7 ^ 5 ^ 5 37 0031540 7 ■ " P E S - iS S C S -T H O M S O N BTA 16 AW S G S-THOMSON SNUBBERLESS TRIACS ■ ■ ■ ■ ■ ■ Itrms = 16 A at To = 80 °C. Vdrm : 200 V to 800 V. Igt = 75 mA Ql-ll-lll . GLASS PASSIVATED CHIP. HIGH SURGE CURRENT : Itsm = 150 A.
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OCR Scan
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E81734)
CB-415)
BTA 16
BTA 112
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BTA16B 600B
Abstract: No abstract text available
Text: 7^237 30E D • 0 0 3 15MM M ■ _ T ' Z S - 1 5 " £ ÿ j S G S - T h Ho Om M s S oO nN B T A 16 B ILdCTGM DtgS S G S-THOMSON TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/ns ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE 2 5 0 0 V r m s
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OCR Scan
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E81734)
DD31S47
BTA16B 600B
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