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    D4216 Price and Stock

    onsemi FOD4216

    OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
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    DigiKey FOD4216 Bulk 9,723 1
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    onsemi FOD4216SD

    OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
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    DigiKey FOD4216SD Cut Tape 3,777 1
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    FOD4216SD Digi-Reel 3,777 1
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    Mouser Electronics FOD4216SD 920
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    New Advantage Corporation FOD4216SD 14,000 1
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    onsemi FOD4216SV

    OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
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    DigiKey FOD4216SV Tube 2,000 1
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    onsemi FOD4216S

    OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
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    DigiKey FOD4216S Bulk 1,000 1
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    onsemi FOD4216TV

    OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
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    DigiKey FOD4216TV Bulk 1,000 1
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    Avnet Americas FOD4216TV Bulk 15 Weeks 1,000
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    Avnet Silica FOD4216TV 16 Weeks 1,000
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    D4216 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: D4216-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.17p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original
    D4216-2 Voltage15 PDF

    T800 transputer

    Abstract: QIC-24
    Text: Chapter 5 □ cmmos 43 IMS D7216 IMS D6216 IMS D5216 IMS D4216 ANSI FORTRAN 77 Toolset Advance Information ANSI FORTRAN 77 cross-development systems for IBM PC, NEC PC, Sun 3, Sun 4 and VAX hosts KEY FEATURES • Full ANSI FORTRAN 77 ANSI X3.9 -1978 •


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    D7216 D6216 D5216 D4216 FSVC78 DC600A QIC-11, QIC-24, T800 transputer QIC-24 PDF

    D4217400

    Abstract: nec 4217400
    Text: D4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/D4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­


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    JJPD4216400, /PD4216400 /JPD4217400 28/24-pin MjE30( 6D-15 fiPD4216400, pPD4216400, D4217400 nec 4217400 PDF

    D4205

    Abstract: B-429 IMS B404 b008 b429
    Text: 471 Index by product number For the purposes of this index the product number prefix 'IMS’ is not shown. B008 309 CA12 383 B012 361 CA13 385 B014 329 CA14 385 B015 353 B016 333 B017 321 B018 375 B250 381 B300 377 B401 149 B404 173 B408 209 B409 219 B410 161


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    D4205 D4214 D4216 D4217 D5205 D5214 D5216 D5217 D6205 D6214 B-429 IMS B404 b008 b429 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D e s c r ip tio n T h e /¿PD 42S16400L, 42 1 6400L, 42S 17400 L, 4 2 1 740 0 L are 4 ,1 94,304 w o rd s by 4 bits dyna m ic C M O S R A M s. T he


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    uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L 42S16400L, 6400L, 26-pin VP15-207-2 IR35-207-2 PDF

    SL680C

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The


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    421780C uPD42S16800 uPD4216800 uPD42S17800 uPD4217800 PD42S16800, 42S17800 28-pin R35-207-2 SL680C PDF

    6400L-A5G

    Abstract: d4216400
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The


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    uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L /iPD42S16400L, 4216400L, 42S17400L, 4217400L JUPD42S16400L, 42S17400L 6400L-A5G d4216400 PDF

    Untitled

    Abstract: No abstract text available
    Text: ffPD421x900/L, 42S1X900/L x = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features


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    ffPD421x900/L, 42S1X900/L 42S16900 42S17900 jjPD421x 900/L 8T-22 pPD421x900/L, PDF

    z10-130

    Abstract: HM5116100 Hitachi Scans-001
    Text: 243 - 16M m £ ífc & WiEicBj rc TRAC CMOS D y n a m i c X i y ¿i- y y # ns) TRCY min (ns) TCAD min (ns) TAH rain (ns) TP rain (ns) RAM ( 1 6, m tt T*CY min (ns) TDH rain (ns) TRWC V D D or VC C (ns) (V) 7 7 7, m I DD max (mA) 216x1 ) A I DD STANDBY I SB/ I S82)


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    216x1) 28P1N M5116100J/Z/TT/RR-10 4K/64 1W5116100J/Z/TT/RR-6 IM5116100J/Z/TT/RR-3 4K/25S UPM217100-70 2K/32 UPD4217100-80 z10-130 HM5116100 Hitachi Scans-001 PDF

    D4205

    Abstract: IMS B404 B0141 IMS B300 IMS B426
    Text: Chapter 7 63 Transputer Development Kits □ mos 7.1 Product Information Transputer Development Kits The success of any microprocessor is determined as much by the quality of the available development tools as by any other feature. Silicon performance is intimately linked to compiler technology. The use


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    B404-3 B428-12 B426-5 B427-5 B008-1 B015-1 D4205 IMS B404 B0141 IMS B300 IMS B426 PDF

    nec hyper

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿D4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.


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    16-BIT, uPD4216165 /zPD4216165 50-pin 42-pin cycles/64 /iPD4216165-50 /iPD4216165-60 PD4216165-70 20too§ nec hyper PDF

    6623A

    Abstract: No abstract text available
    Text: 4k / X V * fjPD421x180/L, 42S1x180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM [M IL V NEC Electronics Inc. Description Fo r th e 4 2 1 7/4 2 S 1 7, RAS o n ly refresh cy cles a n d n o rm al re a d or w r ite cy cles on th e 2 0 4 8 a d d re s s c o m b in a tio n s


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    uPD421x180/L uPD42S1x180/L 18-Bit pPD421x180/L, 42S1X180/L juPD421x180/L jjPD421x 180/L, 42S1x 6623A PDF

    707j

    Abstract: XC002 D42S161
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .


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    16-BIT, 42S16165, 50-pin 42-pin IR35-207-3 VP15-207-3 707j XC002 D42S161 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT M P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ¿¿D4216165 is a 1 048 576 words by 16 bits dynamic CMOS RAM with optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.


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    16-BIT, uPD4216165 fiPD4216165 50-pin 42-pin cycles/64 PD4216165-50 /iPD4216165-60 /iPD4216165-70 20t8os PDF

    Untitled

    Abstract: No abstract text available
    Text: fiPD421x800/L, 42S1x800/L x = 6, 7 2,097,152 x 8-Bit Dynamic CMOS RAM Z Y C C NEC Electronics Inc. Description The devices listed below are fast-page dynam ic RAMs organized as 2M words by 8 bits and designed to o p e ra te from a single power supply. O ptional features


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    fiPD421x800/L, 42S1x800/L 42S16800 42S17800 jnPD421x800/L, pPD421x800/L, PDF

    4216100

    Abstract: sm 0038 PIN DIAGRAM M81B42
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿D4216100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The /D4216100, 4217100 are 16 777 216 w o rd s b y 1 b it d y n a m ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.


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    uPD4216100 uPD4217100 /iPD4216100, 26-pin //PD4216100-50 /iPD4217100-50 IPD4216100-60 pPD4217100-60 /jPD4216100-70 4216100 sm 0038 PIN DIAGRAM M81B42 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC D4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Prelim inary Information Description T he /D4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power


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    pPD4216100, /JPD4216100 /JPD4217100 PDF

    5M21

    Abstract: No abstract text available
    Text: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features


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    iPD421x180/L, 42S1X180/L 18-Bit 42S16180 42S17180 42S18180 4217/42S17, pPD421x180/L, 5M21 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S16400L, 42164001 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The ,uPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The


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    uPD42S16400L 4216400L, 42S17400L, 4217400L PD42S16400L, 42S17400L 26-pin PDF

    NEC uPD 833

    Abstract: NEC 4216160
    Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e


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    uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 50-pin 42-pin VP15-207-2 NEC uPD 833 NEC 4216160 PDF

    nec A2C

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 S 16 4 0 5 L, 4 2 16 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO D escription The ¿¿PD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    uPD42S16405L uPD4216405L /JPD42S16405L 4216405L 26-pin /iPD42S16405L-A50, 4216405L-A50 PD42S16405L-A60, nec A2C PDF

    s727E

    Abstract: d4216165 uPD4216165-60 tlu 011 PD4216165
    Text: DATA SHEET 'J E C MOS INTEGRATED CIRCUIT /¿D4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The /D4216165 is a 1 048 576 w ords by 16 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.


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    uPD4216165 16-BIT, /iPD4216165 fiPD4216165 50-pin 42-pin cycles/64 /1PD4216165-50 uPD4216165-60 iiPD4216165-70 s727E d4216165 tlu 011 PD4216165 PDF

    Untitled

    Abstract: No abstract text available
    Text: N EC MOS INTEGRATED CIRCUIT ju P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿D4216165 is a 1 048 576 words by 16 bits dynamic C M O S RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation,


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    D4216165 16-BIT, IPD4216165 nPD4216165 50-pin 42-pin cycles/64 /iPD4216165-50 b42752S PD4216165 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEC • •■ '*i pPD421x800/L, 42S1X800/L X = 6, 7 2,097,152 X 8-Bit Dynamic CMOS RAM NEC Electronics Inc. P relim inary Information S eptem ber 1992 Description The devices listed below are fast-page dynam ic RAMs organized as 2M words by 8 bits and designed to


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    pPD421x800/L, 42S1X800/L 42S16800 42S17800 PDF