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    MRB11175Y

    Abstract: T-31-21 A 3121 IC FO-67
    Text: MRB11175Y PHILIPS INTERNATIONAL SbE D 711002b D04t33G 3Mb H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor intended fo r use in m ilita ry and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.09 GHz.


    OCR Scan     		PDF MRB11175Y 711062b D04b330 FO-67 MRB11175Y 711005b. 004b333 T-31-21 A 3121 IC