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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA m E\|[lcJ7EL4fl D02fl3ûfl T07 • TC51V16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide	OCR Scan	PDF	D02fl3Ã TC51V16165BFT-70 TC51V16165BFT B-136 DR16180695
A2530 Abstract: No abstract text available Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N 0 PGA204 PGA205 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: The PGA204 and PGA205 are low cost, general pur pose programmable-gain instrumentation amplifiers	OCR Scan	PDF	PGA204 PGA205 PGA204 PGA205 PGA204â PGA205â PGA204: 000V/V A2530
Untitled Abstract: No abstract text available Text: DS4372-2.6 ITC14410012D POWERLINE N-CHANNELIGBT CHIP FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability 10(xs TYPICAL KEY PARAMETERS (25 C)	OCR Scan	PDF	DS4372-2 ITC14410012D
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in	OCR Scan	PDF	BU2520AF PINNING-SOT199 bb53T31 D02fl37S
BST60 Abstract: No abstract text available Text: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/	OCR Scan	PDF	TC5116405BSJ/BST-60 TC5116405BSJ/BST TC5116405BSJ/ 300mil) DR16060295 i72Mfl BST60
Untitled Abstract: No abstract text available Text: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC51V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar	OCR Scan	PDF	TC51V16400BST-60/70 TheTC51V16400BST TheTC51 V16400BST TC51V16400BST 300mil)
SSH10N80 Abstract: 250M SSH10N70 Text: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability	OCR Scan	PDF	SSH10N80/70 SSH10N80 SSH10N70 250M
Untitled Abstract: No abstract text available Text: MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, -5S,-6S,-7S EDO HYPER PAGE M O DE 4194304-BIT (262144-W O RD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance	OCR Scan	PDF	M5M44265CJ 4194304-BIT 62144-W 16-BIT) 262144-word 16-bit