Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fc>7E ] • 7c]fc,l4]i42 D01b32ß 2fei7 KM48C21OOL/LL SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C21 OOL/LL is a CMOS high speed 2,097,152 b itx s Dynamic Random Access Memory. It's
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D01b32Ã
KM48C21OOL/LL
KM48C21
KM48C2100L/LL-6
110ns
KM48C2100L/LL-7
130ns
KM48C2100L/LL-8
150ns
refresh01b
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Untitled
Abstract: No abstract text available
Text: • b ab aza GOlbai? Tfi s ■ m m M IT S U B IS H I m ic r o c o m p u t e r s M 37416M 2-XXXSP/FP p r e lim in a r y Notice: T h i s is not a final specification. So m e param etric lim its a re suhject to change. |“| I T S U B I S H I MI C M P T R / M I P R C
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37416M
52-pin
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Untitled
Abstract: No abstract text available
Text: 32-BIT FLOW-THRU ERROR DETECTION AND CORRECTION UNIT IDT49C465 IDT49C465A In te g ra te d D e v ic e T e c h n o lo g y , In c . FEATURES DESCRIPTION 32-bit wide Flow-thruEDC unit, cascadable to 64 bits Single-chip 64-bit Generate Mode Separate system and memory buses
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32-BIT
IDT49C465
IDT49C465A
64-bit
100mA
20MHz
144-pin
D01b32T
IDT49C465/A
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Untitled
Abstract: No abstract text available
Text: UC5604 UNITRODE 9-Line Low Capacitance SCSI Active Terminator FEATURES DESCRIPTION • The UC5604 provides 9 lines of active termination fo ra SCSI Small Com puter Systems Interface parallel bus. The SCSI standard recommends ac tive termination at both ends of the cable segment.
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UC5604
UC5604
-300m
UDG-94066
T34fisn
D01b324
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MT28F002B1VG-8 B
Abstract: No abstract text available
Text: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at
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MT28F002B1
100ns
110ns,
150ns
40-Pin
VMT28F002B1
001b34b
MT28F002B1VG-8 B
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DNA 1001 DL
Abstract: DSB45 D-33A D35B 60 74
Text: LH543611/21 512x36x2/1024x36 x2 Synchronous Bidirectional FIFO FEATURES FUNCTIONAL DESCRIPTION • Pin-Compatible and Functionally Upwards-Compatible with Sharp LH5420 and LH543601, but Deeper • Expanded Control Register that is Fully Readable as well as Writable
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LH543611/21
512x36x2/1024x36
LH5420
LH543601,
36-bit
LH543611)
LH543621)
36/18/9-bit
DNA 1001 DL
DSB45
D-33A
D35B 60 74
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HCS132
Abstract: qml-38535 qml38535
Text: REVISIONS LTR DESCRIPTION D A TE YR-MO-DA APPROVED REV SHEET REV SHEET 15 REV REV S TA TU S OF SHEETS SHEET 2 3 4 5 PREPARED BY Thanh V. Nguyen PM IC N /A STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAW ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE
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MIL-BUL-103.
MIL-BUL-103
JUL94
D047Qfl
DDlb33a
HCS132
qml-38535
qml38535
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SC1192
Abstract: No abstract text available
Text: O K I Semiconductor MSM63P74-02/ 05/ 07/ 12 512Kbit OTP BUILT-IN VOICE SYNTHESIS LSI GENERAL DESCRIPTION T h e M S M 6 3 P 7 4 is a s in g le - c h ip C M O S A D PC M speech sy n th e siz e r LSI th a th a s a onch ip O TP O ne tim e PR O M for sp eech d ata
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MSM63P74-02/
512Kbit
12bit
AR76-202
2424D
MSM63P74-02/05/07/12
63P74
SC1192
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2SA1011
Abstract: 2SC2344 transistor 2sc2344 544g
Text: Ordering number : EN 544G NQ.544G II 2 S A 1 0 1 1 / 2 S C 2 3 4 4 SMIYOi PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, A F Power Amp, 100W Output Predriver Applications : 2SA1011 Maximum Ratings at Ta=25°C Collector-to-Base Voltage
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2SA1011/2SC2344
2SA1011
001b32fl
2SA1011
2SC2344
transistor 2sc2344
544g
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