CYK256K16SCCB Search Results

CYK256K16SCCB Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CYK256K16SCCB		Cypress Semiconductor	Memory : Specialty DRAM		Original	PDF
CYK256K16SCCBU-55BVI		Cypress Semiconductor	4-Mbit (256K x 16) Pseudo Static RAM		Original	PDF
CYK256K16SCCBU-60BVI		Cypress Semiconductor	4-Mbit (256K x 16) Pseudo Static RAM		Original	PDF
CYK256K16SCCBU-70BVI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 3.3V 4MBIT 256K x 16 70NS 48FBGA		Original	PDF

CYK256K16SCCB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device	Original	PDF	CYK256K16SCCB CYK256K16SCCB CYK256K16SCCBU
CYK256K16SCCB Abstract: No abstract text available Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low-power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device	Original	PDF	CYK256K16SCCB CYK256K16SCCB I/O15) CYK256K16SCCBU 60-ns
CYK256K16SCCB Abstract: No abstract text available Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins	Original	PDF	CYK256K16SCCB I/O15) CYK256K16SCsection CYK256K16SCCB CYK256K16SCCBU 60-ns
CYK256K16SCCB Abstract: No abstract text available Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins	Original	PDF	CYK256K16SCCB I/O15) CYK256K16SCackage CYK256K16SCCB CYK256K16SCCBU 60-ns
BGA 48 "8 x 8" memory Abstract: No abstract text available Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Features in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins	Original	PDF	CYK256K16SCCB I/O15) CYK256K16SCCB CYK256K16SCCBU 60-ns BGA 48 "8 x 8" memory
Untitled Abstract: No abstract text available Text: CYK256K16SCCB PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features • Advanced low power MoBL architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.3V • Typical active current: 3 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected	Original	PDF	CYK256K16SCCB I/O15) CYK256K16SCCBU