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Infineon Technologies AG CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C2663KV18-450BZI	Tray	75		1	1 $413.56 10 $366.786 100 $413.56 1000 $413.56 10000 $413.56	Buy Now
Avnet Americas	CY7C2663KV18-450BZI	Tray		0 Weeks, 2 Days	2	1 - 10 $428.8216 100 $416.2092 1000 $416.2092 10000 $416.2092	Buy Now
	CY7C2663KV18-450BZI	Tray		11 Weeks	105	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	CY7C2663KV18-450BZI					1 - 10 - 100 - 1000 $347.45 10000 $347.45	Get Quote
Infineon Technologies AG CY7C2665KV18-450BZI IC SRAM 144MBIT PAR 165FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C2665KV18-450BZI	Tray			105	1 - 10 - 100 - 1000 $335.22638 10000 $335.22638	Buy Now
Avnet Americas	CY7C2665KV18-450BZI	Tray		11 Weeks	105	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	CY7C2665KV18-450BZI					1 - 10 - 100 - 1000 $325.47 10000 $325.47	Get Quote
EBV Elektronik	CY7C2665KV18-450BZI			12 Weeks	105	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC CY7C2668KV18-500BZC QDR SRAM, 4MX36, 0.45NS PBGA165
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C2668KV18-500BZC	Bulk			1	1 $360.56 10 $360.56 100 $360.56 1000 $360.56 10000 $360.56	Buy Now
Rochester Electronics LLC CY7C2668KV18-550BZC QDR SRAM, 4MX36, 0.45NS PBGA165
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C2668KV18-550BZC	Bulk			1	1 $360.56 10 $360.56 100 $360.56 1000 $360.56 10000 $360.56	Buy Now
Infineon Technologies AG CY7C2665KV18-550BZI IC SRAM 144MBIT PAR 165FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C2665KV18-550BZI	Tray			210	1 - 10 - 100 - 1000 $394.56723 10000 $394.56723	Buy Now
Avnet Americas	CY7C2665KV18-550BZI	Tray		11 Weeks	210	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	CY7C2665KV18-550BZI		104			1 $482.31 10 $427.77 100 $427.77 1000 $427.77 10000 $427.77	Buy Now
Verical	CY7C2665KV18-550BZI		389		1	1 $532.05 10 $532.05 100 $500.125 1000 $452.2375 10000 $452.2375	Buy Now
Rochester Electronics	CY7C2665KV18-550BZI		389		1	1 $425.64 10 $425.64 100 $400.1 1000 $361.79 10000 $361.79	Buy Now

EBV Elektronik	CY7C2665KV18-550BZI			12 Weeks	210	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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CY7C266 Datasheets (104)

Part	Manufacturer	Description	Datasheet Type	PDF
CY7C266	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20DC	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20DC	Cypress Semiconductor	8192 x 8 PROM Power Switched and Reprogrammable	Scan	PDF
CY7C266-20JC	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20PC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20PC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF
CY7C266-20PC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF
CY7C266-20PC	Cypress Semiconductor	8192 x 8 PROM Power Switched and Reprogrammable	Scan	PDF
CY7C266-20WC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20WC	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-20WC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF
CY7C266-20WC	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF

CY7C266-20WC	Cypress Semiconductor	8192 x 8 PROM Power Switched and Reprogrammable	Scan	PDF
CY7C266-25DC	Cypress Semiconductor	8Kx8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-25DC	Cypress Semiconductor	8192 x 8 PROM Power Switched and Reprogrammable	Scan	PDF
CY7C266-25DMB	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Original	PDF
CY7C266-25DMB	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF
CY7C266-25DMB	Cypress Semiconductor	8K x 8 Power-Switched and Reprogrammable PROM	Scan	PDF

CY7C266 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C2665 Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666 Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)	Original	PDF	CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666
CY7C2663KV18 Abstract: CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: CY7C2663KV18 CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC
27C64 Abstract: CY7C266 R1250 direct replacement Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit	Original	PDF	CY7C266 CY7C266 600-mil-wide 27C64 R1250 direct replacement
27C64 Abstract: CY7C266 R1250 8kx8 eprom pin diagram Text: CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM	Original	PDF	1CY7C266 CY7C266 600-mil-wide CY7C266 27C64 R1250 8kx8 eprom pin diagram
Untitled Abstract: No abstract text available Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM	Original	PDF	CY7C266 27C64 600-mil-wide CY7C266
Untitled Abstract: No abstract text available Text: CY7C2663KV18/CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	CY7C2663KV18/CY7C2665KV18 144-Mbit 550-MHz
p20d Abstract: CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H Text: Qualification Report March, 1992 QTP 91296 Version 1.0 64K EPROM FAMILY, 0.8µ MARKETING PART NUMBER DEVICE DESCRIPTION CY7C261 8K x 8 POWER-SWITCHED CY7C263 8K x 8 CY7C264 8K x 8 600-MIL PKG CY7C266 8K x 8 POWER-SWITCHED EPROM PINOUT CY7C269 8K x 8 REGISTERED DIAGNOSTIC	Original	PDF	CY7C261 CY7C263 CY7C264 600-MIL CY7C266 CY7C269 QTP90271 p20d CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H
Untitled Abstract: No abstract text available Text: CY7C2663KV18/CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	CY7C2663KV18/CY7C2665KV18 144-Mbit 550-MHz
3M Touch Systems Abstract: CY7C2663KV18-450BZXC Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: 3M Touch Systems CY7C2663KV18-450BZXC
w16 90 Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020 Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM	Original	PDF	CY7C266 600-mil-wide CY7C266 w16 90 27C64 R1250 27C64 8k EPROM MS-020
Untitled Abstract: No abstract text available Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM	Original	PDF	CY7C266 600-mil-wide CY7C266
3M Touch Systems Abstract: CY7C2663KV18-450BZXC Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: 3M Touch Systems CY7C2663KV18-450BZXC
3M Touch Systems Abstract: No abstract text available Text: CY7C2666KV18, CY7C2677KV18 CY7C2668KV18, CY7C2670KV18 144-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 144-Mbit density (16 M x 8, 16 M × 9, 8 M × 18, 4 M × 36)	Original	PDF	CY7C2666KV18, CY7C2677KV18 CY7C2668KV18, CY7C2670KV18 144-Mbit CY7C2666KV18 CY7C2677KV18 CY7C2668KV18 3M Touch Systems
3M Touch Systems Abstract: CY7C2663KV18-450BZXC Text: CY7C2661KV18, CY7C2676KV18 CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports	Original	PDF	144-Mbit CY7C2661KV18, CY7C2676KV18 CY7C2663KV18, CY7C2665KV18 550-MHz CY7C2661KV18: CY7C2676KV18: CY7C2663KV18: 3M Touch Systems CY7C2663KV18-450BZXC

LC 7258 Abstract: AG04 Text: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)	OCR Scan	PDF	CY7C266 7C266 32-Pin 600-M LC 7258 AG04
Untitled Abstract: No abstract text available Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged	OCR Scan	PDF	CY7C266 CY7C266 600-mil-wide
Untitled Abstract: No abstract text available Text: CY7C266 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power — Less than 85 mW when deselected	OCR Scan	PDF	CY7C266 27C64 7C266 600-mil-wide 600-M 32-Pin 7C266
Untitled Abstract: No abstract text available Text: _ CY7C266 c y p p f^ s = W SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammablUty • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military)	OCR Scan	PDF	CY7C266 CY7C266 7C266 --55W
Untitled Abstract: No abstract text available Text: CY7C266 PRELIM INARY CYPRESS SEMICONDUCTOR 8192 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Direct replacement for EPROMs • Windowed for reprogrammability • Capable of withstanding > 2000V static discharge • High speed	OCR Scan	PDF	CY7C266 266-55PC 66-55W 266-55D 266-55LM 7C266-55Q
Untitled Abstract: No abstract text available Text: _ CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • C M O S fo r o p tim u m sp ee d /p o w e r T he C Y 7C 266 is a hig h -p e rfo rm a n ce 8192 w o rd by 8 bit C M O S PRO M . W hen de selected , th e C Y 7C 266 a u to m a tica lly	OCR Scan	PDF	CY7C266
C266 Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram Text: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically	OCR Scan	PDF	CY7C266 27C64 CY7C266 600-mil-wide C266 P15 Package R1250 8kx8 eprom pin diagram
Untitled Abstract: No abstract text available Text: CY7C266 ^ 0 CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TT L -com patible I/O • CMOS for optimum speed/power • D irect replacem ent for 27C64 E PR O M s • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)	OCR Scan	PDF	CY7C266 266-35PC 266-45PC CY7C266-- 266-45D 7C266-- 45LMB 266-45Q
27C64 Abstract: CY7C266 R1250 LP 06 A4 A1 AA Text: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically	OCR Scan	PDF	CY7C266 27C64 600-mil-wide R1250 LP 06 A4 A1 AA
333Q Abstract: 27C64 CY7C266 a50tb Text: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64	OCR Scan	PDF	CY7C266 27C64 CY7C266 600-mil-wide 45LMB 32-Pin CY7C266â 45QMB 333Q a50tb

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CY7C266 Price and Stock

Infineon Technologies AG CY7C2663KV18-450BZI

Infineon Technologies AG CY7C2665KV18-450BZI

Rochester Electronics LLC CY7C2668KV18-500BZC

Rochester Electronics LLC CY7C2668KV18-550BZC

Infineon Technologies AG CY7C2665KV18-550BZI

CY7C266 Datasheets (104)

CY7C266 Datasheets Context Search

C2665

CY7C2663KV18

27C64

27C64

Untitled

Untitled

p20d

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3M Touch Systems

w16 90

Untitled

3M Touch Systems

3M Touch Systems

3M Touch Systems

LC 7258

Untitled

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C266

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27C64

333Q