CY62157DV20 Search Results

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157CV18

Abstract: CY62157DV20
Contextual Info: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157CV18

Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA BV48A
Contextual Info: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax

Contextual Info: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157CV18

Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA
Contextual Info: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V