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    CY62137V Price and Stock

    Infineon Technologies AG CY62137VLL-70ZXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Infineon Technologies AG CY62137VLL-70ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Infineon Technologies AG CY62137VLL-70ZXET

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Rochester Electronics LLC CY62137VNLL-70ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Infineon Technologies AG CY62137VNLL-70ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    CY62137V Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62137V Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137V18 Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137VLL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137VLL-55ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137VLL-55ZI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VLL-55ZXI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VLL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137VLL-70BAI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VLL-70ZE Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VLL-70ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137VLL-70ZI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VLL-70ZSXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF
    CY62137VLL-70ZSXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF
    CY62137VLL-70ZXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF
    CY62137VLL-70ZXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF
    CY62137VN Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VNLL-55ZXI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VNLL-70ZSXA Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62137VNLL-70ZSXAT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF
    CY62137VNLL-70ZSXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 70NS 44TSOP Original PDF

    CY62137V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V 44-pin CY62137CV30.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY62137V MoBL 128K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: — 1.8V–3.3V • Ultra-low active, standby power • Easy memory expansion with CE and OE features


    Original     		PDF CY62137V I/O15)

    CY62137CV

    Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance
    Text: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power


    Original     		PDF CY62137CV30/33 CY62137CV CY62137V 48-ball CY62137CV25 CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance

    VDR 0047

    Abstract: CY62137V CY62137VSL
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • • • • • • • • — Automotive: –40°C to 125°C High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V


    Original     		PDF CY62137V 44-pin CY62137CV30. VDR 0047 CY62137VSL

    55BA

    Abstract: ultra fine pitch BGA CY62137V CY62137VLL-55ZI
    Text: 37V18 CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V


    Original     		PDF 37V18 CY62137V CY62137V: 55BA ultra fine pitch BGA CY62137VLL-55ZI

    62137A

    Abstract: No abstract text available
    Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell


    Original     		PDF R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A

    VDR 0047

    Abstract: CY62137V
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V I/O15) CY62137CV30 VDR 0047

    CY62137V

    Abstract: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI
    Text: 1*CY62137V18 MoBL2 CY62137V MoBL™ 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range:


    Original     		PDF CY62137V18 CY62137V CY62137V: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI

    CY62137

    Abstract: No abstract text available
    Text: CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V


    Original     		PDF CY62137V CY62137V: CY62137

    CY62137V

    Abstract: CY62138V
    Text: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor


    Original     		PDF R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) CY62136V/62137V/62138V R52LD-3 CY62137V 44-pin CY62137V CY62138V

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL CY62137V18 MoBL2™ 128K x 16 Static RAM Features are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		PDF CY62137V CY62137V18 CY62137V18: CY62137V:

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs


    Original     		PDF CY62137V 44-pin I/O15) CY62137CV30.

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V 44-pin CY62137CV30

    Untitled

    Abstract: No abstract text available
    Text: CY62137VN MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C • High Speed: 55 ns and 70 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features


    Original     		PDF CY62137VN 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected


    Original     		PDF CY62137V 44-pin CY62137CV30.

    CY62137V

    Abstract: CY62137V18
    Text: CY62137V MoBL CY62137V18 MoBL2™ 128K x 16 Static RAM Features are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		PDF CY62137V CY62137V18 CY62137V18: CY62137V:

    VDR 0047

    Abstract: CY62137VN CY62137VNLL
    Text: CY62137VN MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power


    Original     		PDF CY62137VN 44-pin VDR 0047 CY62137VNLL

    CY62135V18

    Abstract: CY7C1329 8355F
    Text: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.


    Original     		PDF R52D-3, CY62135V18 CY62136V18/CY62137V18 CY62136V18/CY62136V18/CY62137V18 R52D-3 CY7C1329-AC 30C/60 CY62135V18 CY7C1329 8355F

    CY62137CV

    Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V CY62137CVSL-70BAXI
    Text: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power


    Original     		PDF CY62137CV30/33 CY62137CV CY62137V 48-ball CY62137CV25 CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V CY62137CVSL-70BAXI

    Untitled

    Abstract: No abstract text available
    Text: CY62137VN MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power


    Original     		PDF CY62137VN 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 • Ultra-low standby power — Typical standby current: 1 µA


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 48-ball 44-pin

    BAI 59

    Abstract: plaskon FBGA PACKAGE thermal resistance
    Text: Cypress Semiconductor Package Qualification Report 000201 VERSION 1.0 October, 2000 48 Fine Pitch Ball Grid Array FBGA Level 3 7mm x 7 mm Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069


    Original     		PDF CY62127VLL-BAI CY62137VLL-BAIB BAI 59 plaskon FBGA PACKAGE thermal resistance

    A15C

    Abstract: CY62137V CY62137V18 CY62137VLL-70BAI CY62137VLL-70ZI CY62137
    Text: CY62137V MoBL CY62137V18 MoBL2™ CYPRESS 1 2 8 K x 1 6 S ta tic R A M Features are placed in a h igh -im pe da nce state w h en : de selected CE HIG H , ou tputs are disabled (OE HIG H), BHE and BLE are disabled (B H E , BLE HIG H), o r during a w rite op era tion (CE


    OCR Scan     		PDF CY62137V18 CY62137V: CY62137V A15C CY62137VLL-70BAI CY62137VLL-70ZI CY62137

    CY62137VLL-70ZI

    Abstract: WE 251 A15C CY62137V CY62137VLL-70BAI
    Text: / CYPRESS PRELIMINARY CY62137V MoBL 1 2 8 K x 1 6 S t a t ic R A M disabled B H E , B LE HIGH , or during a write operation (CE LOW, and W E LOW). Features • Low voltage range: -1 .8 V -3 .3 V • Ultra-low active, standby power • Easy memory expansion with C E and OE features


    OCR Scan     		PDF CY62137V CY62137VLL-70ZI WE 251 A15C CY62137VLL-70BAI