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    CY62137CV18 Search Results

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    CY62137CV18 Price and Stock

    Rochester Electronics LLC CY62137CV18LL-70BAI

    IC SRAM 2MBIT PARALLEL 48FBGA
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    DigiKey CY62137CV18LL-70BAI Bulk 173
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    Rochester Electronics LLC CY62137CV18LL-70BAIT

    IC SRAM 2MBIT PARALLEL 48FBGA
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    DigiKey CY62137CV18LL-70BAIT Bulk 173
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    Cypress Semiconductor CY62137CV18LL-70BAI

    CY62137CV18LL-70BAI
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    Verical CY62137CV18LL-70BAI 6,944 192
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    Rochester Electronics CY62137CV18LL-70BAI 8,698 1
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    Cypress Semiconductor CY62137CV18LL-70BAIT

    CY62137CV18LL-70BAIT
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    Verical CY62137CV18LL-70BAIT 2,500 192
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    CY62137CV18LL-70BAIT 2,000 192
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    Rochester Electronics CY62137CV18LL-70BAIT 5,000 1
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    CY62137CV18 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62137CV18 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV18LL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV18LL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62137CV18LL-70BKI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62137CV18LL-70BVI Cypress Semiconductor 128K x 16 Static RAM Original PDF

    CY62137CV18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62137CV18

    Abstract: 1105
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a


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    PDF CY62137CV18 I/O15) CY62137BV18 1105

    Untitled

    Abstract: No abstract text available
    Text: CY62137CV18 MoBL2TM PRELIMINARY 128K x 16 Static RAM Features • Low voltage range: — CY62137CV18: 1.65V−1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


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    PDF CY62137CV18 CY62137CV18: I/O15) CY62137CV18MoBL2TM

    Untitled

    Abstract: No abstract text available
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features deselected CE HIGH or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are


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    PDF CY62137CV18 CY62137CV18: CY62137V18/BV18 I/O15)

    CY62137CV18

    Abstract: No abstract text available
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance


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    PDF CY62137CV18 I/O15) CY62137CV18: CY62137V18/BV18

    AN1384

    Abstract: AN1064 CY62137CV18 CY62137FV18 CY62137FV18LL
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62137CV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 5 µA


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    PDF CY62137FV18 CY62137CV18 AN1384 AN1064 CY62137CV18 CY62137FV18LL

    CY62137CV18

    Abstract: No abstract text available
    Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a


    Original
    PDF CY62137CV18 I/O15) CY62137BV18

    AN1064

    Abstract: CY62137CV18 CY62137FV18 CY62137FV18LL
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65V–2.25V ■ Pin compatible with CY62137CV18 ■ Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 5 µA


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    PDF CY62137FV18 CY62137CV18 AN1064 CY62137CV18 CY62137FV18LL

    2VCC-02

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


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    PDF CY62137FV18 CY62137CV18 48-Ball 2VCC-02

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


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    PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


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    PDF CY62137FV18 CY62137CV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power


    Original
    PDF CY62137FV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


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    PDF CY62137FV18 CY62137CV18 48-Ball

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


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    PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


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    PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more


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    PDF CY62137FV18 I/O15) 65Vits

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original
    PDF CY62137FV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM Functional Description [1] Features • Very high speed: 55 ns The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current.


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    PDF CY62137FV18 CY62137CV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM Features • • • • portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power


    Original
    PDF CY62137FV18 CY62137CV18 48-ball