CY62136CV Search Results

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

CY62136CV30

Abstract: CY62136V
Contextual Info: 36CV30 ADVANCE INFORMATION CY62136CV30 MoBL 128K x 16 Static RAM Features power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are placed in a

CY62136CV

Abstract: CY62136CV30 CY62136CV33 CY62136V
Contextual Info: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

CY62136CV30

Abstract: CY62136CV30LL CY62136V
Contextual Info: CY62136CV30 MoBL 2-Mbit 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

Contextual Info: CY62136CV18 MoBL2TM PRELIMINARY 128K x 16 Static RAM Features • Low voltage range: — CY62136CV18: 1.65V-1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

Contextual Info: CY62136FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136V, CY62136CV30/CV33, CY62136EV30 • Ultra-low standby power — Typical standby current: 0.5 µA

CY62136CV18

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

CY62136CV

Abstract: CY62136CV30 CY62136CV33 CY62136V
Contextual Info: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

Contextual Info: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description [1] Features • Very high speed: 45 ns • Temperature ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62136V, CY62136CV30/CV33, and

CY62136V

Abstract: CY62136CV30
Contextual Info: 36CV30 CY62136CV30 MoBL 2M 128K x 16 Static RAM Features • • • • • • • • • High Speed: 55 ns and 70 ns availability Voltage range: 2.7V–3.3V Pin Compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

CY62136CV18

Contextual Info: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

CY62136CV30

Abstract: CY62136EV30 CY62136EV30LL
Contextual Info: CY62136EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62136VLL-70ZXI

Abstract: CY62136V CY62136VLL
Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not

Contextual Info: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE

CY62136VLL

Contextual Info: CY62136V MoBL 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

an3842

Contextual Info: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode

Contextual Info: CY62136V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected

AN1064

Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
Contextual Info: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

AN1064

Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
Contextual Info: CY62136FV30 MoBL 2-Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments