CR1210 Search Results

CR1210

Contextual Info: Features • ■ ■ ■ Very high quality and stability Power rating at 70 °C: CR1210 - 1/3 W Three layer termination process with nickel barrier prevents leaching and provides excellent solderability Tight tolerances of bottom electrode width ■ ■ Suitable for most types of soldering

CR20 Series

Contextual Info: CENTRAL SE MICONDU CTOR hi D 1 ooD D iss General Purpose S ilicon Power R ectifier tl DE | nflTTbB DDDDISS 7 CR12020 CR12040 CR12060 CR12080 CR12100 CR12- 005 CR12010 CR16005 CR16010 CR16020 CR16040 CR16060 CR16080 CR16100 CR16120 CR20005 CR20010 CR20020 CR20040

CR1210

Contextual Info: Features • ■ ■ Excellent stability Power rating at 70°C: CR1210 - 1/3W, CR2010 - 1/2W, CR2512 - 1W Three layer termination process with nickel barrier prevents leaching and provides excellent solderability ■ ■ ■ Tight tolerances of bottom electrode

bourns cat10

Abstract: concave CAT16-LV2F6
Contextual Info: b o u r n s . c o m Chip Resistors / Chip Arrays I. CR Series Chip Resistors Model CR0402 Chip Resistor .2 CR0603/CR0805/CR1206 Chip Resistors.4 CR1210/CR2010/CR2512 Chip Resistors.8

CR0402-16W

Abstract: CR1210-4W
Contextual Info: Surface Mount Engineering Kits Chip Resistors Series CR0402-16W CR0402-16W CR0603-16W CR0603-16W CR0805-10W CR0805-10W CR1206-8W CR1206-8W CR1210-4W CR2010-2W Size 0402 0402 0603 0603 0805 0805 1206 1206 1210 2010 Power Rating 0.063W 0.063W 0.063W 0.063W 0.100W

CR16

Abstract: CR12 CR12-005 CR12-010 CR12-020 CR12-040 CR12-060 CR12-080 CR12-100 CR12-120
Contextual Info: CENTRAL SE MICONDU CTOR hi D 1 ooDDiss i | jp D j- s ¿ \* 12-20 Amperes General Purpose S ilicon Power R ectifier tl DE | nflTTbB DDDDISS 7 CR12005 CR12010 CR12020 CR12040 CR12060 CR12080 CR12100 CR12120 CR16005 CR16010 CR16020 CR16040 CR16060 CR16080 CR16100

LRC0603-2512

Abstract: HPC0603-1206 crs0805 PRC2010-2512 PRC0402 PRC0201 PD1206 CRF0603-0805 CR0603-1206 HVC0603-2512
Contextual Info: RESISTOR PACKAGING OPTIONS Surface Mount EIA RS-481 if applicable Style SMR * PR9406 PRC0201 PRC0402 PRC0603-1210 PRC2010-2512 CR0201-0402 CR0603-1206 CR1210-2512 CRS0805-2512 CRF0603-0805 CRF1210-2512 CFF2512 LRC0402 LRC0603-2512 PD0805 PD1206 PD2218 HVC0603-2512

cr0603 VENKEL

Abstract: CR0805 CR1210 pulse CR0603 CR1206 CR2010 CR2512
Contextual Info: Pulse Power vs. Pulse Duration Time Applied pulse power [Watt] 1000 100 10 1 0.1 0.1 1 10 CR2512 100 1000 Pulse duration time [m sec] CR2010 CR1210 CR1206 CR0805 CR0603 CR0402 Test Condition: 1. 100 cycle pulses as referenced below shall be applied at room temperature.

IRC CHF

Abstract: WCR0805
Contextual Info: ^ lo w c W ra p a ro u n d GENERAL PURPOSE CHIP RESISTOR O r g a n ic P r o t e c t io n t e r m i n a t io n s fo r s o ld e r in g T in /le a d S o ld e r WCR SERIES* • • • • • • THICK FILM ELEMENT R eplaces all previous CHF designs W ide ohm ic range 0.27 ohm s to 22 M egohm

Contextual Info: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N

Contextual Info: Si87xx OptoComp EVB UG Si87 XX LE D E MULATOR I NPUT I SOLATOR VS . O PTO C OMPA RISON E VALUATION B OAR D U SER ’ S G UIDE 1. Introduction The Si87xx isolator vs. opto-comparison evaluation board allows designers to evaluate Silicon Lab's family of CMOS based LED Emulator Input isolators and simultaneously compare an optocoupler with the same input signal

marking code E192

Abstract: R430 CR1210 R010 R015 R020 R030 R040 R050 R065
Contextual Info: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application

CR1210

Contextual Info: Thick Film Chip Resistor—CR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy) ■ Application

Panasonic AN1618

Abstract: RF22 r60m C2012X5R0J226MT ECJ1VC1H151J KEYSTONE 5001 smd transistor s3 H1045-00151-50V5-T ISL8036 SMD TRANSISTOR
Contextual Info: Application Note 1618 Author: Paul Orfanu ISL8036ADUALEVAL1Z Dual 3A Low Quiescent Current High Efficiency Synchronous Buck Regulator Description Quick Setup Guide The ISL8036ADUALEVAL1Z kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from

2n2222 sot23

Abstract: Z117 Z123 Diode diode z104 a105 transistor Z16 SOT23 2n2222 sot-23 c60 equivalent transistor z5 b49 diode
Contextual Info: P3V VDD VIO VDD P2 P1 NDA # P3V A1 1 VIO VIO 1 B1 TRST# A2 2 TCK A3 3 A4 4 2 B2 TOOL1 3 B3 TMS TDO A5 5 C52 10 16V 2 7227 6 B6 INTA# A7 7 7 B7 X28 A8 8 A9 9 9 B9 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# A19 19 19 B19 AD30 AD26 25 B25

CR16

Abstract: CR12-120 CR12-040 CR12-060 CR12-080 CR12-100 CR12-010 CR12-020 CR16-010 CR16-020
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 12 16 20 40 @TC (oC) 150 150 150 150 IFSM (AMPS) 300 325 350 800 CASE DO-4* DO-5* VRRM (VOLTS) 100 CR12-010 CR16-010 CR20-010 CR40-010 200 CR12-020 CR16-020 CR20-020 CR40-020 400 CR12-040 CR16-040 CR20-040

10h125

Abstract: HDR2X25 Transistor 6C5 DSUB25ST 10h125_plcc BERG 40 pin single row header housing bt.656 interface PLCC-44 molex CCIR-656 HMP8154
Contextual Info: The HMP8154EVAL1 Encoder Evaluation Platform Semiconductor Application Note July 1997 AN9743 Author: Steven Martin Features board includes an encoder, voltage references and decoupling, analog output filters, and I/O connectors. • HMP8154 Video Encoder • Digital Parallel ITU-R BT.656 Input

86B-0021A-DPC

Abstract: SOT23-BEC c0603 footprint Venkel CR0603 10W TLV431DBZ C0603X7R101-104M CR1210-4W IND-LPS4018 C0603X7R100 C0603X7R101-102K
Contextual Info: AN525 O PTIMIZED C LASS 1 PD D ESIGNS U SING T H E S i 3 4 0 2 1. Introduction The Si3402 is designed to support up to 20 W of input power with over 15 W of power delivered to the load. For this reason, the standard reference designs have been optimized for high-power situations.

transistor c331

Abstract: L302A CONN TRBLK 4 l305a J300B mfr c304 J301G L303A C0603X5R6R3-106M J301A
Contextual Info: Si3480MS8-KIT E VALUATION K IT U SER ’ S G UIDE FOR TH E Si3480 POWER MANAGEMENT CONTROLLER 1. Introduction In Power over Ethernet PoE Power Sourcing Equipment (PSE), typically, not all PoE ports are connected to loads, and the ports that are connected to loads draw substantially less than the maximum power defined in the

LCR1210

Abstract: CR1210-2W LCR2010 LCR2512 CR0402-16W CR1206-4W cr2512-2w 0.022 j.100 resistor 270 ohm CR2010-2W
Contextual Info: Chip Resistors – CR, LCR and ULCR Features • Flat Chip Resistors for surface mount applications • LCR and ULCR for current sensing applications Dimensions L C C C C T w 01005 0201 0402 0603 0805 1206 1210 2010 2512* L Length Inches (mm) 0.016 ± .0008

Contextual Info: Chip Resistors – CR, LCR and ULCR Features • Flat Chip Resistors for surface mount applications • LCR and ULCR for current sensing applications Dimensions L C C C C T w 01005 0201 0402 0603 0805 1206 1210 2010 2512* L Length Inches (mm) 0.016 ± .0008

alpha numeric marking 0603

Contextual Info: Chip Resistors – CR, LCR and ULCR Features • Flat Chip Resistors for surface mount applications • LCR and ULCR for current sensing applications Dimensions for 01005-2512 Dimensions for LCR2512 L L C C C C C1 C1 C1 C1 T T w w C2 C2 01005 0201 0402 0603

resistor 2 MEG 0.5W

Abstract: CR0402-16W
Contextual Info: Chip Resistors – CR, LCR and ULCR Features • Flat Chip Resistors for surface mount applications • LCR and ULCR for current sensing applications Dimensions L C C C C T w 01005 0201 0402 0603 0805 1206 1210 2010 2512* L Length Inches (mm) 0.016 ± .0008

CR0402-16W

Abstract: CR0805-8W
Contextual Info: Chip Resistors Features • Flat Chip Resistors for surface mount applications. • Excellent mechanical strength and electrical stability due to special electrode construction. • Free from troubles at placement due to accurate and uniform physical dimensions.