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    Small Signal MOSFET

    Abstract: No abstract text available
    Text: PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization


    Original     		CP759R CMRDM7590 13-May Small Signal MOSFET PDF