CMOS256K Search Results

NMB Technologies

Abstract: 1M204-07 CMOS256K 1M204 1M204-10 LWL1R
Contextual Info: MËÊBmÊÊÊmmm m MiïÊmmÊmÊÊÊmÊËÈÊÊmmm. NMB Sem iconductor AAA1M204 Fast Page Mode CMOS256K x 4 Dynamic RAM [p iB iS iU M n r a K ii PIN CONFIGURATIONS FEATURES 20 i/o , C • 2 6 2,14 4 x 4 bit Organization ■ Single 5V ± 1 0 % Power Supply

QFP44-P-1010

Contextual Info: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)

Contextual Info: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a Preliminary Specification d e s c rip tio n The NN51V4260A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN51V4260A series is fabricated with advanced CMOS technology and de­

Contextual Info: SHARP CORP blE » LH51256L FEATURES Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (Ta = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (Ta = 0 to 60°C) DESCRIPTION The LH51256L is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby

intel eprom Intelligent algorithm

Abstract: LH57254-90 LH57254J-90
Contextual Info: LH57254/J PIN CONNECTIONS FEATURES • 32,768 • Access times: x CMOS 256K 32K x 8 OTPROM/EPROM 8 bit organization • • VppC 1 28 □ Vcc C 2 27 □ Au a 7C 3 26 3 A i 3 A .C 4 25 □ Ae A sC 5 24 □ A , M I 6 23 □ A 11 aiî LH57254J: 70/90 ns LH57254: 90 ns

NN514256

Abstract: NN514256A
Contextual Info: NN514256/ NN514256A series Fast Page Mode CMOS 256Kx4bit Dynamic RAM DESCRIPTION The NN514256/A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256/A series is fabricated with advanced CMOS technology and designed

Contextual Info: NN514170 series Fast Page Mode CMOS 256K X 16bit Dynamic RAM NPN>Â< DESCRIPTION The NN514170 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514170 series is fabricated with advanced CMOS technology and designed

Contextual Info: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a DESCRIPTION The N N 51V4260A series is a high perform ance C M O S D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The N N 51V4260A series is fabricated with advanced C M OS technology and designed with innovative design

Contextual Info: NN51V4265A series EDO Hyper Page Mode CMOS 256 K x 16bit Dynamic RAM NPN/À DESCRIPTION The N N 51V4265A series is a high perform ance C M OS D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The NN51V4265A series is fabricated with advanced C M OS technology and designed with innovative design

nn514260

Abstract: NN514260A 514260A
Contextual Info: NN514260/NN514260A series Fast Page Mode CMOS 256K x 16bit Dynamic NPN a DESCRIPTION The N N514260/A series is a high performance C M O S Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514260/A series is fabricated with advanced C M O S technology and designed with innovative design

NN514265

Abstract: nn514260 N092-FXX-00047 NN514260A 514265 EZ-34 tp NN514265A N092-FXX-00026
Contextual Info: NPN a NN514265/ NN514265A series EDO (Hyper Page) Mode CMOS 256Kx 16bit Dynamic RAM DESCRIPTION T he N N 514265/A series is a high perform ance C M OS D ynam ic Random A ccess M em ory organized as 262,144 w ords by 16 bits. The NN514265/A series is fabricated w ith advanced C M OS technology and designed w ith innovative design