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    Comchip Technology Corporation Ltd CJ2101-G

    MOSFET
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    NAC CJ2101-G 3,000
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    CJ2101 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch


    Original
    PDF OT-323 CJ2101 OT-323

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch


    Original
    PDF OT-323 CJ2101 OT-323

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel 8-V D-S MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch


    Original
    PDF OT-323 OT-323 CJ2101

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS on Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch


    Original
    PDF OT-323 OT-323 CJ2101