CHA7114 Search Results

CHA7114 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CHA7114		United Monolithic Semiconductors	X Band High Power Amplifier		Original	PDF

CHA7114 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CHA7114-99F Abstract: CHA7114 x-Band High Power Amplifier Contextual Info: CHA7114 X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A	Original	CHA7114 CHA7114 DSCHA7114-7347 CHA7114-99F x-Band High Power Amplifier	PDF
CHA7114-99F Abstract: CHA7114 x-Band High Power Amplifier x band high power amplifier Contextual Info: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A	Original	CHA7114 CHA7114 DSCHA7114-7347 CHA7114-99F x-Band High Power Amplifier x band high power amplifier	PDF
Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS	OCR Scan	CHA7114 CHA7114 DSCHA7114-0197	PDF
x-band power transistor Abstract: CHA7114 x-Band High Power Amplifier CHA7114-99F Contextual Info: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBcp High PAE: > 40% @ 4dBcp 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A	Original	CHA7114 CHA7114 DSCHA7114-0197 x-band power transistor x-Band High Power Amplifier CHA7114-99F	PDF
Contextual Info: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 1 1 1 1 1 1 1 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBcp High PAE: > 40% @ 4dBcp 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A	Original	CHA7114 CHA7114 DSCHA7114-0197	PDF
PPH25X Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14	Original		PDF
HC3014 Contextual Info: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter • CHC3014 1 Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for	Original	HC3014 CHA1014	PDF